| PART |
Description |
Maker |
| 50MT060ULS 50MT060ULST |
600V UltraFast 4-20 kHz Ls Chop S IGBT in a MTP package
LOW SIDE CHOPPER IGBT MTP
|
IRF[International Rectifier]
|
| GB05XP120KTPBF GB05XP120KPBF |
Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A
|
Vishay Siliconix
|
| F4-75R06W1E3 |
EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
100 A, 600 V, N-CHANNEL IGBT
|
Infineon Technologies AG
|
| C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| VS-25MT060WFAPBF |
IGBT MTP
|
Vishay Siliconix
|
| 20MT120UFP |
40 A, 1200 V, N-CHANNEL IGBT ROHS COMPLIANT, MTP, 16 PIN
|
Vishay Intertechnology, Inc.
|
| 7MBP10PE120 7MBR10PE120 |
IGBT module (S series)
IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
| MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
From old datasheet system
|
Toshiba Semiconductor
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| APTGF90A60T1G |
110 A, 600 V, N-CHANNEL IGBT
Phase leg NPT IGBT Power Module
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi Corporation
|
| BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五（巴西）国际消费电子展| 150A一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
