| PART |
Description |
Maker |
| HPMD-7905-TR1 HPMD-7905 HPMD-7905-BLK |
HPMD-7905 · FBAR Duplexer for US PCS Band
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| D6RB2G140E1AJ |
FBAR/SAW Devices (SAW Duplexers)
|
Taiyo Yuden (U.S.A.), I...
|
| F5QA763M0M2QL-YA F5QA763M0M2QL-JA F5QA763M0M2QL-Q |
FBAR/SAW Devices (SAW Type)
|
Taiyo Yuden (U.S.A.), I...
|
| KFX1459T |
SPECIFICATIONS FOR SAW DUPLEXER (RF DUPLEXER FOR CORDLESS PHONE CT-1)
|
KEC[KEC(Korea Electronics)]
|
| KFX0414T |
900MHz Cordless Phone
SPECIFICATIONS FOR SAW DUPLEXER (RF DUPLEXER FOR CORDLESS PHONE CIS)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| KFX1404T |
900MHz Cordless Phone
SPECIFICATIONS FOR SAW DUPLEXER (RF DUPLEXER FOR CORDLESS PHONE CIS)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| EPC1064V EPC1213 EPC1441 |
Configuration Devices for ACEX/ APEX/ FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| PICOSMD035F MINISMDC100F MINISMDC200S MINISMDC150F |
PolySwitch Resettable Devices Surface-mount Devices
|
Tyco Electronics
|
| NANOSMDM075F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| MINISMDC150 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| NANOSMDC075F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
