| PART |
Description |
Maker |
| ESD9X3.3ST5G |
ESD Protection Diodes In Ultra Small SOD−923 Package
|
ON Semiconductor
|
| UESD3.3ST5G |
ESD Protection Diodes In Ultra Small SOD−723 Package
|
ONSEMI[ON Semiconductor]
|
| NTZD3155CT1G NTZD3155C NTZD3155CT2G NTZD3155CT5G |
Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package.
|
ON Semiconductor
|
| CM1206-16CP CM1206-16CS L06 CM1206-04CP CM1206-04C |
ESD Protection Arrays, Chip Scale Package
4, 8 and 16-Channel ESD Protection Arrays in Chip Scale Package with OptiGuard™ Coating (PACDN24xxC pin compatible)
|
California Micro Devices Corporation
|
| EMIF06-10006F1 EMIF06-10006 |
±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
6 LINES EMI FILTER AND ESD PROTECTION
6 LINES EMI FILTER AND ESD PROTECTION
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FMESD05C-15PF |
Small Package ESD Protection
|
FutureWafer Tech Co.,Lt...
|
| DF3A8.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S16FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6LFE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| NTJD4401N08 NTJD4401NT2G |
Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
|
ON Semiconductor
|
| NVJD4401N |
Small Signal MOSFET 20 V, Dual N?Channel, SC?8 ESD Protection
|
ON Semiconductor
|
