| PART |
Description |
Maker |
| STGB10M65DF2 |
Trench gate field-stop IGBT, M series 650 V, 10 A low loss
|
STMicroelectronics
|
| STGW40H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
|
ST Microelectronics
|
| MCE-6E8F-Z01 |
650 NM LASER DIODE 650 nm激光二极管
|
Electronic Theatre Controls, Inc.
etc
Unity Opto Technology
List of Unclassifed Manufacturers
|
| APT100GN60B2 APT100GN60B2G B2G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: T-MAX™ [B2]; BV(CES) (V): 600; VCE(sat) (V): 1.5; IC (A): 87;
IGBT
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| APT35GN120L2DQ2 APT35GN120L2DQ2G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX™ [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| 2SA1385-Z |
Low VCE(sat):VCE(sat)=-0.18 V TYP.Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
| FF1400R12IP4 |
IGBT Modules up to 1200V Dual ; Package: AG-PRIME3-1; IC (max): 1,400.0 A; VCE(sat) (typ): 1.75 V; Configuration: Dual Modules; Technology: IGBT4; Housing: PrimePACK 3;
PrimePACK? Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
PrimePACK?? Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
|
Infineon Technologies AG
|
| STF11NM65N STFI11NM65N STD11NM65N STP11NM65N |
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAKFP package
N-channel 650 V, 0.425 Ω typ., 11 A MDmesh?II Power MOSFET in DPAK, TO-220FP, I2PAKFP and TO-220 packages
N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
|
STMicroelectronics
ST Microelectronics
|
| STP45N65M5 STW45N65M5 STB45N65M5 STF45N65M5 |
N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET
N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
|
STMicroelectronics
|
| GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes
IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
