| PART |
Description |
Maker |
| M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| C1220X7R0J105M085AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| C1220X5R1H103M085AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| C0816X5R1A224M050AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| C0816X5R1C223M050AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| C0816X5R1C473M050AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| LLA185C70G105ME01L LLA31MR71A225MA01L LLA219R71A47 |
Eight Terminals Low ESL Type X7R(R7)/X7S(C7) Characteristics
|
Murata
|
| M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| LM39102G-S08-R LM39102G-SH2-R |
Reversed-battery protection
|
Unisonic Technologies
|
| M36L0T7050B2 M36L0T7050B2ZAQ M36L0T7050B2ZAQE M36L |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
Numonyx B.V
|
| CTCB0603F-170U CTCB0805F-190U CTCB1206F-190U CTCB0 |
Chip Beads - Multi-layer
1 FUNCTIONS, 4.5 A, FERRITE CHIP
|
Central Technologies
|
