| PART |
Description |
Maker |
| PS2500 |
Low-Power Direct Digital Modulation Frequency Synthesizer
|
Philsar
|
| FFAF60A150DS FFAF60A150DSTU |
6A/1500V Damper and 20A/600V Modulation Diode
MODULATION DAMPER DIODE 6 A, 1500 V, SILICON, RECTIFIER DIODE
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM
64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
| FFPF60B150DS FFPF60B150DSTU |
6A/1500V Damper and 20A/600V Modulation Diode
DAMPER MODULATION DIODE
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SA1964 A5800376 2SC5248 |
Transistor for audio amplifier output stages / TV velocity modulation
For audio amplifier output stages/TV velocity modulation (-160V, -1.5A)
For audio amplifier output stages/TV velocity modulation (-160V -1.5A)
From old datasheet system
For audio amplifier output stages/TV velocity modulation (-160V/ -1.5A)
|
ROHM[Rohm]
|
| DMV16 DMV56 DMV32 DMV DMVF5 DMVXX |
From old datasheet system
DAMPER MODULATION DIODE FOR VIDEO
DAMPER MODULATION DIODE FOR VIDEO
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
|
| TL494BD TL494CD TL494CN TL494IN TL494BDR2 TL494CDR |
SWITCHMODE PULSE WIDTH MODULATION CONTROL CIRCUIT
SWITCHMODE PULSE WIDTH MODULATION CONTROL CIRCUIT 0.5 A SWITCHING CONTROLLER, 200 kHz SWITCHING FREQ-MAX, PDSO16
|
ONSEMI[ON Semiconductor]
|
| MC-4R128FKK8K-840 MC-4R128FKK8K |
128MB 32-bit Direct Rambus DRAM RIMM Module 128MB2位直接Rambus的内存RIMM的模
128MB 32-bit Direct Rambus DRAM RIMM Module 64M X 18 DIRECT RAMBUS DRAM MODULE, DMA232
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC-4R64FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 32M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
