| PART |
Description |
Maker |
| GS8180D18D-250I GS8180D18D-200 GS8180D18D-200I GS8 |
18Mb Burst of 4 SigmaQuad SRAM
|
GSI[GSI Technology]
|
| GS8662Q08E-167 GS8662Q08E-250 GS8662Q08E-300I GS86 |
72Mb SigmaQuad-II Burst of 2 SRAM
|
GSI[GSI Technology]
|
| GS8180DV18D-200I GS8180DV18D-133I GS8180DV18D-167 |
18Mb Burst of 4 SigmaQuad SRAM
|
GSI[GSI Technology]
|
| GS8182D18D-200I GS8182D18D-167 GS8182D18D-250 GS81 |
18Mb Burst of 4 SigmaQuad-II SRAM
|
GSI[GSI Technology]
|
| GS8342DT19BD-300I GS8342DT19BD-350I GS8342DT19BD-4 |
JEDEC-standard pinout and package
36Mb SigmaQuad-II TM Burst of 4 SRAM
Dual Double Data Rate interface
|
GSI Technology
|
| IS49NLS18160 |
288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| K4C89083AF-ACF5 K4C89083AF-ACF6 K4C89083AF-ACFB K4 |
288Mb x18 Network-DRAM2 Specification
|
Samsung Electronic
|
| IS49NLC18160 IS49NLC36800 IS49NLC93200 |
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| ST72324J2B6 ST72324J2T3 ST72324J4B6 ST72324K2T3 ST |
8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, 4 TIMERS, SPI, SCI INTERFACE
288Mb RLDRAM Component
|
STMicroelectronics
意法半导
|
| M36L0R7060T1 M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
STMicroelectronics
ST Microelectronics, Inc.
|
| HYR166430G-840 HYR163230G-840 HYR166430G-845 HYR16 |
288MB Rambus RIMM Modules(288MRambus RIMM 模块)
RAMBUS DRAM Module Rambus的内
|
SIEMENS AG
Infineon Technologies AG
|
