| PART |
Description |
Maker |
| IRF640N IRF640NL IRF640NS |
18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-CHANNEL POWER MOSFETS 200V, 18A, 0.15OHM
N-Channel Power MOSFETs 200V, 18A, 0.15-Ohm
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRF240-243 IRF241 IRF242 IRF243 IRF641 IRF642 IRF6 |
N-Channel Power MOSFETs, 18A, 150-200V N沟道功率MOSFET8A条，15000
N-Channel Power MOSFETs/ 18A/ 150-200V
N-Channel Power MOSFETs 18A 150-200V
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF640FP |
IRF640FP 18A 200V N CHANNEL POWER MOSFET
|
First Components Intern...
|
| IRFN240 |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| HY18N20T |
200V / 18A N-Channel Enhancement Mode MOSFET
|
HY ELECTRONIC CORP.
|
| FDPF18N20F |
N-Channel MOSFET, FRFET 200V, 18A, 0.145ヘ
|
Fairchild Semiconductor
|
| IRF640S |
N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET
|
ST Microelectronics
|
| STSJ80N4LLF3 |
N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET?III Power MOSFET for DC-DC conversion
N-channel 40V - 0.0042ヘ - 18A - PowerSO-8⑩ STripFET⑩III Power MOSFET for DC-DC conversion
|
STMicroelectronics
|
| FDS8672S FAIRCHILDSEMICONDUCTORCORP-FDS8672S |
N-Channel PowerTrench㈢ SyncFET⑩ 30V, 18A, 4.8mヘ
N-Channel PowerTrench? SyncFET?/a> 30V, 18A, 4.8mΩ
|
Fairchild Semiconductor
|
| IRF9240 IRF9240-15 |
Simple Drive Requirements
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A)
HEXFET?TRANSISTORS 200V, P-CHANNEL
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
IRF[International Rectifier]
|
| STW21NM50N STF21NM50N STB21NM50N-1 STP21NM50N STP2 |
N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET
N-channel 500V - 0.15ヘ - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
