| PART |
Description |
Maker |
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| 2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| BSP50BSP52 BSP51 Q62702-P1165 BSP50 BSP50BBSP52 BS |
NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
From old datasheet system
RP10 (E) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 3.3V; 2:1 Wide Input Voltage Range; 10 Watts
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| 2SC945 |
Collector current up to 150mA High hFE linearity Collector to base voltage VCBO 60 V
|
TY Semiconductor Co., L...
|
| SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
|
http://
|
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| BF622 Q62702-F1052 |
From old datasheet system
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| BF623 Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MC68HCL05C8 MC68HSC05C8 68HC705C8 MC68HC05C8 MC68H |
TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,25A I(C),TO-264AA
IGBT; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):24V; Power Dissipation, Pd:200W; Collector Emitter Voltage, Vceo:900V; Transistor Polarity:N Channel
PROGRAMMING REFRERENCE GUIDE 编程REFRERENCE指南
|
Motorola, Inc.
Motorola Inc
Motorola Mobility Holdings, Inc.
|
| PS9817-2-V-F3 PS9817-2-V-F4 PS9817-1-V-F3 PS9817-1 |
Power Resistor; Series:MK; Resistance:10ohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C; Terminal Type:Radial Leaded
NECs HIGH CMR, 10Mbps OPEN COLLECTOR OUTPUT TYPE 8-PIN SSOP (SO-8) HIGH-SPEED OPTOCOUPLER 邻舍高CMR10Mbps的集电极开路输出型8引脚SSOP（以SO - 8）高速光电耦合
SWITCH, REED SPST 20.5MM 邻舍高CMR0Mbps的集电极开路输出型8引脚SSOP（以SO - 8）高速光电耦合
NECs HIGH CMR, 10Mbps OPEN COLLECTOR OUTPUT TYPE 8-PIN SSOP (SO-8) HIGH-SPEED OPTOCOUPLER 邻舍高CMR0Mbps的集电极开路输出型8引脚SSOP（以SO - 8）高速光电耦合
|
California Eastern Laboratories, Inc.
|
| 2SA1514K |
High breakdown voltage.Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
