| PART |
Description |
Maker |
| CRF03 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 1.6 to 1.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV
|
Toshiba Corporation
|
| CRF02 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 1.8 to 2.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV
|
Toshiba Corporation
|
| TMP86F409NG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 30.2 to 31.6; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86CS44UG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.3 to 2.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86FH09ANG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86CS25ADFG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.0 to 2.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86F808DNG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 34.2 to 35.7; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86C822UG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.10 to 3.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TMP86CP27AFG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 1.9 to 2.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TMP86CM27FG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 21.6 to 22.6; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| IRF3202SPBF |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.0 to 4.4; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
|
International Rectifier
|
| TC7SG32AFS |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 34.2 to 38.0; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
2 Input OR Gate
|
Toshiba Corporation
Toshiba Semiconductor
|
