| PART |
Description |
Maker |
| NAS1291-8 NAS1291-7 NAS1291-9 |
LEAST MATERIAL CONDITION
|
List of Unclassifed Man...
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| TMP86F409NG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 30.2 to 31.6; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86FH47ADUG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.8 to 3.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| IRG4IBC20UDPBF |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.4 to 5.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
International Rectifier
|
| IRF1902PBF |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.0 to 5.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
International Rectifier
|
| JTOS-200P |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.5 to 5.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Mini-Circuits
|
| EE-X1088 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.6 to 2.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Omron Electronics LLC
|
| TMP86PH47UG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 5.0 to 5.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TMP86PS27FG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 6.6 to 6.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| 0805L06 |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.6 to 5.0; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Littelfuse, Inc.
|
| TMP86CH29BUG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 8位微控制
|
Toshiba, Corp.
|
| TC7SG32AFS |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 34.2 to 38.0; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
2 Input OR Gate
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Toshiba Corporation
Toshiba Semiconductor
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