PART |
Description |
Maker |
IRF5NJ540 |
Avalanche Energy Ratings POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*) SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL 100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
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IRF[International Rectifier]
|
FDG361N |
N-Channel 100V Specified PowerTrench MOSFET N-Channel 100V Specified PowerTrenchMOSFET CAP CER 68PF 1KVDC U2J 1206
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
IRF9130 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A)
|
International Rectifier
|
IRF5Y540CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.058ohm Id=18A*) POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*)
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IRF[International Rectifier]
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FQU8P10 FQD8P10 FQD8P10TF FQD8P10TM FQU8P10TU |
100V P-Channel QFET 100V P-Channel MOSFET 6.6 A, 100 V, 0.53 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
FDP047N10 |
N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM 100V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 120 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
IRF150 JANTXV2N6764 JANTX2N6764 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.055ohm/ Id= 38A)
|
IRF[International Rectifier]
|
FQT7N10 FQT7N10TF |
100V N-Channel MOSFET 1.7 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET 100V N-Channel QFET
|
Fairchild Semiconductor, Corp.
|
FDS3692 |
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package N-Channel PowerTrench?? MOSFET 60V, 45A, 20m??? N-Channel PowerTrench MOSFET 100V, 45A, 60mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
JANSF2N7389 IRHF9130 IRHF93130 JANSR2N7389 |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
|
IRF[International Rectifier]
|
IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 8A条(丁)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 4.9AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 1A条(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 28A条(丁)|04AE TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 600毫安(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五(巴西)直|5A条(丁)|04AE
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Black Box, Corp. Bourns, Inc. Vishay Intertechnology, Inc. Samsung Semiconductor Co., Ltd. 3M Company
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