| PART |
Description |
Maker |
| PXFC192207FH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTAB182002FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA260451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
| PTF240101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
|
Infineon Technologies AG
|
| MXR9745T1 MXR9745RT1 |
31.5 dBm / 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
31.5 dBm 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| PTVA030121EA |
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ?450 MHz
|
Cree, Inc
|
| PXFC191507FCV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ?1990 MHz
|
Infineon Technologies A...
|
| PTFA182001E |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz
|
Infineon Technologies AG
|
| PXAC260602FCV1R0XTMA1 PXAC260602FC-16 PXAC260602FC |
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ?2690 MHz
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ?2690 MHz
|
Infineon Technologies A...
|
