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| Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 5.90.2 Unit: mm 4.90.2 q q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings -150 -150 -5 -100 -50 1 150 -55 ~ +150 Unit V V 3.2 0.45-0.1 1.27 1.27 +0.2 13.50.5 Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2632, which is optimum for the pre-driver stage of a 40 to 60W output amplifier. 2.540.15 0.7-0.2 +0.3 0.70.1 8.60.2 s Features 0.45-0.1 +0.2 V mA mA W C C 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage (Ta=25C) Symbol ICBO VCEO VEBO hFE fT Cob NV * Conditions VCB = -100V, IE = 0 IC = -0.1mA, IB = 0 IE = -10A, IC = 0 VCE = -5V, IC = -10mA IC = -30mA, IB = -3mA VCB = -10V, IE = 10mA, f = 200MHz VCE = -10V, IE = 0, f = 1MHz VCE = -10V, IC = -1mA, GV = 80dB Rg = 100k, Function = FLAT min typ max -1 Unit A V V -150 -5 130 450 -1 200 5 150 300 VCE(sat) V MHz pF mV *h FE Rank classification R 130 ~ 220 S 185 ~ 330 T 260 ~ 450 hFE Rank 1 Transistor PC -- Ta 1.2 -80 Ta=25C -70 1.0 -100 25C Ta=75C -80 2SA1124 IC -- VCE -120 VCE=-5V IC -- VBE Collector power dissipation PC (W) Collector current IC (mA) -60 -50 -40 -30 -20 -10 0.8 0.6 IB=-500A -450A -400A -350A -300A -250A -200A -150A -100A Collector current IC (mA) -25C -60 0.4 -40 0.2 -50A -20 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C 25C IC/IB=10 600 hFE -- IC 300 VCE=-5V fT -- IE VCB=-10V Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) -10 -30 -100 250 400 Ta=75C 300 200 25C -25C 150 - 0.3 - 0.1 200 100 -25C 100 50 - 0.03 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 0 -1 -3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 6 Collector output capacitance Cob (pF) 5 IE=0 f=1MHz Ta=25C 4 3 2 1 0 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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