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2SC5002 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5002 1500 800 6 7(Pulse14) 3.5 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose (Ta=25C) 2SC5002 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 4typ 100typ Unit A mA A V sElectrical Characteristics Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A VCE=12V, IE=-0.5A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 23.00.3 9.50.2 a b V V MHz pF 16.2 1.75 2.15 1.05 +0.2 -0.1 5.450.1 5.450.1 4.4 1.5 0.65 +0.2 -0.1 3.3 0.8 3.35 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 50 IC (A) 4 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.8 IB2 (A) -1.6 tstg (s) 4.0max tf (s) 0.2max 1.5 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C - VCE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V) 7 1.5 A VCE(sat)-IC Characteristics (Typical) 3 (I C: I B= 5 :1) I C - VBE Temperature Characteristics (Typical) 7 (V CE= 5V) 1. 2A 6 Collector Current I C (A) 700 mA 6 5 2 Collector Current I C( A) 4 400 mA 4 mp) mp) e Te 200m A 125C IB=1 00m A 2 25C (C 2 1 0 0 1 2 3 4 0 0.02 0.1 0.5 1 5 10 0 0 0.5 -30C (Case 1 (Cas ase Te 3 Temp) 1.0 3.0 1.5 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) h FE - IC Characteristics (Typical) (V C E= 5V) 100 20 t stg *tf - I C Characteristics (Typical) j- a( C/W) . V C C= 200V . I C : IB1: -IB2 =5 :1: 2 3 j-a - t Characteristics t s tg *t f ( s) DC Curr ent Gain h FE 5 Transient Thermal Resistance 50 10 125C t stg 25 C 1 10 5 -3 0 C Switching Ti me 1 0.5 tf 0.5 2 0.02 0.05 0.1 0.5 1 5 7 0.1 0.2 0.5 1 5 7 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 100s Reverse Bias Safe Operating Area 20 80 P c - T a Derating 10 Co lle ctor Cu rren t I C( A) Collect or Cur ren t I C( A) Ma ximum Po we r Dissipatio n P C (W) 10 5 60 W ith In fin ite he 5 40 at si nk 1 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1% Without Heatsink Natural Cooling 0.5 20 Without Heatsink 1 100 500 Collector-Emitter Voltage V C E( V) 1000 0.1 50 100 500 1000 2000 3.5 0 0 50 100 150 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 122 |
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