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2SC5071 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5071 500 400 10 12(Pulse24) 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=-1A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ (Ta=25C) 2SC5071 Unit A A 19.90.3 V V V MHz pF 4.0 a b o3.20.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.7 IB2 (A) -1.4 ton (s) 1.0max tstg (s) 3.0max tf (s) 0.5max 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 12 VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) (IC/I B= 5) Collector-Emitter Saturation Voltage V C E (s at)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) IC - V BE Temperature Characteristics (Typical) (V CE= 4V) 12 1A 10 Collector Current I C (A) 80 0m A 60 0m A 10 V B E( sat) 1 -55C (Case Temp) Collector Current I C (A) 8 400m A 8 6 25C (Cas 125C (C e Temp) as e 25 Temp ) C 6 emp se T (Ca 25C mp 4 4 se IB=100mA 2 V C E( sat) 0 0.02 0.05 0.1 0.5 1 5 -5 0 0 1 2 3 4 10 0 0 0.5 Base-Emittor Voltage V B E( V) 12 12 5 C 2 -55C 5 5C C (C (Cas (Ca e Te Te 200mA Collector-Emitter Voltage V C E( V) Collector Current I C( A) (V C E= 4V) 40 125C DC Cur rent Gain h F E 5 j - a( C/W) hFE - IC Characteristics (Typical) t on*t s tg *t f ( s) t on* t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 3 25C -30C 1 0.5 tf Transient Thermal Resistance VCC 200V I C: I B1: I B2= 10:1:-2 t s tg Swi tchi ng T im e 1 0.5 10 8 0.02 0.05 0.1 0.5 1 5 10 12 0.1 0.5 t on 1 Collector Current I C( A) 5 10 12 0.3 1 10 Time t(ms) 100 mp) emp ase T ) ) ) 1.0 1000 Collector Current I C( A) Safe Operating Area (Single Pulse) 30 10 0 s Reverse Bias Safe Operating Area 30 100 P c - T a Derating 10 Co lle ctor Cu rren t I C (A) Collector Curr ent I C (A) 5 10 5 M aximum Power Dissipa ti on P C( W) W ith In fin ite he 50 at si nk 1 0.5 Without Heatsink Natural Cooling 1 0.5 Without Heatsink Natural Cooling L=3mH IB2 =1.0A Duty:less than 1% 0.1 5 10 50 100 500 0.1 5 10 50 100 500 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 124 |
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