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| Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope 5.00.2 Unit: mm 4.00.2 q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings 40 20 7 8 5 0.75 150 -55 ~ +150 Unit V V V A A W C C 2.540.15 123 0.45 -0.1 1.27 +0.2 13.50.5 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. 5.10.2 s Features 0.45 -0.1 1.27 +0.2 2.30.2 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO IEBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = -50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min typ max 0.1 1.0 0.1 Unit A A A V V 20 7 230 150 1 150 50 *2 600 V MHz pF Pulse measurement *1h FE1 Rank classification Q 230 ~ 380 R 340 ~ 600 Rank hFE1 1 Transistor PC -- Ta 1.0 2.4 Ta=25C IB=7mA 6mA 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4 2SD965 IC -- VCE 6 VCE=2V 5 25C IC -- VBE Collector power dissipation PC (W) Collector current IC (A) Collector current IC (A) 0.8 2.0 Ta=75C 4 -25C 0.6 3 0.4 2 0.2 1mA 1 0 0 20 40 60 80 100 120 140 160 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=30 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C IC/IB=30 600 hFE -- IC VCE=2V Ta=25C 500 Ta=75C 400 25C 300 -25C 200 Ta=75C 25C -25C 25C Forward current transfer ratio hFE 3 10 100 0.1 0.3 1 3 10 0.1 0.3 1 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 400 350 300 250 200 150 100 50 0 - 0.01 - 0.03 - 0.1 - 0.3 100 Cob -- VCB Collector output capacitance Cob (pF) VCB=6V Ta=25C IE=0 f=1MHz Ta=25C Area of safe operation (ASO) 100 30 Single pulse Ta=25C Transition frequency fT (MHz) Collector current IC (A) 80 10 ICP IC 3 t=1s 1 0.3 0.1 0.03 t=10ms 60 40 20 0 -1 -3 -10 1 3 10 30 100 0.01 0.1 0.3 1 3 10 30 100 Emitter current IE (A) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 |
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