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| BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright (c) 1999, Power Innovations Limited, UK MAY 1999 - REVISED SEPTEMBER 1999 G Designed for Self Oscillating Inverter Applications Rugged 1500 V Planar Construction Integral Free-Wheeling Anti-Parallel Diode B C E TO-220 PACKAGE (TOP VIEW) G G 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA device symbol C B E absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING Collector-emitter voltage (IB = 0) Collector-emitter voltage (VBE = 0) Emitter-base voltage (IC = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current (see Note 1) Continuous device dissipation at (or below) 25C case temperature Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTE 1: This value applies for tp = 10 ms, duty cycle 2%. SYMBOL VCEO VCES VEBO IC ICM IB IBM Ptot Tj Tstg TL VALUE 700 1500 11 2 2.5 2 2.5 50 -55 to +125 -55 to +150 300 UNIT V V V A A A A W C C C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1999 - REVISED SEPTEMBER 1999 electrical characteristics at 25C case temperature PARAMETER VCEO VCBO VEBO ICEO ICES IEBO Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector cut-off current Collector-emitter cut-off current Emitter cut-off current Base-emitter saturation voltage Collector-emitter saturation voltage Forward current transfer ratio IC = IC = IEB = 1 mA 100 A 1 mA IB = 0 VBE = 0 IC = 0 IC = 500 mA IC = 1 A IC = 2 A IC = 250 mA IC = 500 mA IC = 10 mA (see Notes 2 and 3) IC = 100 mA IC = 250 mA IC = 500 mA (see Notes 2 and 3) 10 10 10 7 0.3 0.7 21 25 25 18 (see Notes 2 and 3) TEST CONDITIONS MIN 700 1500 11 100 100 1 1.0 1.1 1.2 1.2 3.0 V V TYP MAX UNIT V V V A A mA VCE = 700 V VCE = 1500 V VEB = 11 V IB = 100 mA IB = 100 mA IB = 400 mA IB = 50 mA IB = 100 mA VCE = 5 V VCE = 5 V VCE = 5 V VCE = 5 V VBE(sat) VCE(sat) hFE NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 3.2 mm from the device body. thermal characteristics PARAMETER RJA RJC Junction to free air thermal resistance Junction to case thermal resistance MIN TYP MAX 62.5 2 UNIT C/W C/W resistive switching characteristics at 25C case temperature PARAMETER td tr ts tf Delay time Rise time Storage time Fall time IC = 500 mA VCC = 125 V IB(on) = 50 mA IB(off) = 250 mA tp = 300 s Duty cycle = 2% TEST CONDITIONS MIN TYP 0.1 0.6 1.0 0.2 MAX UNIT s s s s PRODUCT INFORMATION 2 BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1999 - REVISED SEPTEMBER 1999 TYPICAL CHARACTERISTICS FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 100 VCE = 5 V hFE - Forward Current Transfer Ratio TC = 125C TC = 25C TC = 0C R3636CHF 10 1*0 0*01 0*1 1*0 10 IC - Collector Current - A Figure 1. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 R3636CFB MAXIMUM REVERSE-BIAS SAFE OPERATING AREA 3 R3636CRB TC = 25C IB(on) = IC / 10 VBE(off) = -5 V TC = 25C IC - Collector Current - A 2 IC - Collector Current - A 1*0 0*1 tp = 100 s tp = 1 ms tp = 10 ms DC Operation 0*01 1*0 10 100 1000 1 0 0 200 400 600 800 1000 1200 1400 1600 VCE - Collector-Emitter Voltage - V VCE - Collector-Emitter Voltage - V Figure 2. Figure 3. PRODUCT INFORMATION 3 BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1999 - REVISED SEPTEMBER 1999 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO-220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,32 14,55 1,32 1,23 18,0 TYP. 6,1 5,6 0,97 0,66 1 2 3 1,47 1,07 14,1 12,7 2,74 2,34 5,28 4,68 2,90 2,40 0,64 0,41 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT INFORMATION 4 BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1999 - REVISED SEPTEMBER 1999 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1999, Power Innovations Limited PRODUCT INFORMATION 5 |
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