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| SHINDENGEN General Purpose Rectifiers SIL Bridges D2SB80 800V 1.5A FEATURES OUTLINE DIMENSIONS Case : 2S Unit : mm *oeSingle In-Line Package Thin *oe High IFSM *oe Applicable to Automatic Insertion APPLICATION *oe Switching power supply *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation RATINGS *oe* Absolute Maximum Ratings (If not specified Tl=25*Z) @ Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 800 V IO Average Rectified Forward Current50Hz sine wave, R-load, On glass-epoxy substrate, Ta=25*Z A 1.5 Peak Surge Forward CurrentIFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 *Z A 80 I2t 2ms*...t*10ms*@Tj=25*Z A2s Current Squared Time 32 *oe* Electrical Characteristics (If not specified Tl=25*Z) @ Item Symbol Conditions Ratings Unit VF I =0.75A, Pulse measurement,Rating of per diode Forward Voltage F Max.1.05 V IR V =V , Pulse measurement,Rating of per diode Max.10 EA Reverse Current R RM Thermal Resistance AEjl junction to lead Max.10 *Z/W AEja junction to ambient Max.47 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D2SBx Forward Voltage 10 Forward Current IF [A] Tl=150C [TYP] Tl=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D2SBx 4 3.5 Forward Power Dissipation Forward Power Dissipation PF [W] 3 SIN 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 Average Rectified Forward Current IO [A] Tj = 150C Sine wave D2SBx 3 Derating Curve Average Rectified Forward Current IO [A] 2.5 PCB Glass-epoxy substrate Soldering land 3mm 2 SIN 1.5 1 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] Sine wave R-load Free in air D2SBx 120 Peak Surge Forward Capability IFSM 10ms 10ms 100 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 80 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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