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DS1104SG
DS1104SG
Rectifier Diode
Replaces January 2000 version, DS4167-3.2 DS4167-4.0 August 2001
FEATURES
s Double Side Cooling s High Surge Capability
KEY PARAMETERS VRRM 3000V IF(AV) 1571A IFSM 20000A
APPLICATIONS
s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak Reverse Voltage VRRM V Conditions
DS1104SG30 3000 DS1104SG29 2900 DS1104SG28 2800 DS1104SG27 2700 DS1104SG26 2600 DS1104SG25 2500 Lower voltage grades available.
VRSM = VRRM + 100V Outline type code: G See Package Details for further information. Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS1104SG29 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DS1104SG
CURRENT RATINGS
Tcase = 75oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1849 2904 2545 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1173 1843 1502 A A A
Tcase = 100oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1315 2065 1880 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 840 1320 1130 A A A
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DS1104SG
SURGE RATINGS
Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 175oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 175oC VR = 0 Max. 16.0 1.28x 106 20.0 2.0 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 12.0kN with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 11.5 175 200 13.5
o
Min. dc Anode dc -
Max. 0.032 0.064 0.064 0.008 0.016 185
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
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DS1104SG
CHARACTERISTICS
Symbol VFM IRRM QS Irr VTO rT Parameter Forward voltage Peak reverse current Total stored charge Reverse recovery current Threshold voltage Slope resistance Conditions At 1800A peak, Tcase = 25oC At VRRM, Tcase = 175oC IF = 1000A, dIrr/dt = 3A/s Tcase = 175C, VR = 100V At Tvj = 175C At Tvj = 175C Min. Max. 1.3 50 1600 85 0.67 0.31 Units V mA C A V m
CURVES
2500 Measured under pulse conditions
4000
2000 Instantaneous forward current, IF - (A)
3000
Mean power dissipation - (W)
dc Half wave
1500
3 phase 2000
6 phase
1000
Tj = 175C
Tj = 25C
1000
500
0 0.5
1.0 1.5 Instantaneous forward voltage, VF - (V)
2.0
0 0
1000
2000
3000
Mean forward current, IF(AV) - (A)
Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.IF Where
Fig.3 Dissipation curves A = 0.82527 B = -0.07771 C = 0.00012 D = 0.019599 these values are valid for Tj = 125C for IF 500A to 2500A
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DS1104SG
10000
1000
Conditions: Tj = 175C VR = 100V IF = 1000A
Reverse recovery current Irr - (A)
IF QS dIF/dt IRM
Conditions: Tj = 175C VR = 100V IF = 1000A
Stored charge, QS - (C)
1000
100
100 0.1
1.0 10 Rate of decay of on-state current dIF/dt - (A/s)
100
10 0.1
1.0 10 Rate of decay of forward current, dIF/dt - (A/s)
100
Fig.4 Total stored charge
30 I2t = I2 x t 25 1200
Thermal Impedance - junction to case, Rth(j-c) - (C/W)
Fig.5 Maximum reverse recovery current
1300
0.1 Anode side cooled
2
Peak half sine forward current - (kA)
Double side cooled
20
1100
I2t value - (A2s x 103)
15
1000
0.01
10 I2t
900
Conduction
5
800
Effective thermal resistance Junction to case C/W Double side 0.032 0.034 0.044 0.057 Single side 0.064 0.066 0.076 0.089
0 1 ms
10
1
23
5
10
20
700 50
d.c. Halfwave 3 phase 120 6 phase 60
0.001 0.001
0.01
Cycles at 50Hz Duration
0.1 Time - (s)
1.0
10
Fig.6 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 175C)
Fig.7 Maximum (limit) transient thermal impedance junction to case
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DS1104SG
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole O3.6 x 2.0 deep (in both electrodes)
Cathode O58.5 max O34 nom
O34 nom
Anode
Nominal weight: 250g Clamping force: 12kN 10% Package outine type code: G
Note: 1. Package maybe supplied with pins and/or tags.
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DS1104SG
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4167-4 Issue No. 4.0 August 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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