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PD- 94062B
SMPS MOSFET
Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TA = 25C TJ , TSTG
IRF3711 IRF3711S IRF3711L
HEXFET(R) Power MOSFET
VDSS
20V
RDS(on) max
6.0m
ID
110A
TO-220AB IRF3711
D2Pak IRF3711S
TO-262 IRF3711L
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 20 110 69 440 120 3.1 0.96 -55 to + 150
Units
V V A W W W/C C
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
--- 0.50 --- ---
Max.
1.04 --- 62 40
Units
C/W
Notes
through
are on page 11
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1
11/15/01
IRF3711/3711S/3711L
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.022 4.7 6.2 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, ID = 1mA 6.0 VGS = 10V, ID = 15A m 8.5 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 16V, VGS = 0V A 100 VDS = 16V, VGS = 0V, TJ = 125C 200 VGS = 16V nA -200 VGS = -16V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 29 7.3 8.9 33 12 220 17 12 2980 1770 280 Max. Units Conditions --- S VDS = 16V, ID = 30A 44 ID = 15A --- nC VDS = 10V --- VGS = 4.5V --- VGS = 0V, VDS = 10V --- VDD = 10V --- ID = 30A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 10V --- = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
460 30
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- 110 A --- 440 1.3 --- 75 92 72 98 V ns nC ns nC
VSD trr Qrr trr Qrr
--- 0.88 --- 0.82 --- 50 --- 61 --- 48 --- 65
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 30A, V GS = 0V TJ = 125C, IS = 30A, VGS = 0V TJ = 25C, IF = 16A, VR=10V di/dt = 100A/s TJ = 125C, IF = 16A, VR=10V di/dt = 100A/s
D
S
2
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IRF3711/3711S/3711L
1000
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
1000
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
100
100
2.7V
2.7V
20s PULSE WIDTH TJ = 25 C
1 10 100
10 0.1
10 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
TJ = 25 C TJ = 150 C
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
ID = 110A
I D , Drain-to-Source Current (A)
1.5
1.0
0.5
10 2.0
V DS = 25V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF3711/3711S/3711L
14
100000
ID = 30A
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
12 10 8 6 4 2 0 0 20
VDS = 16V VDS = 10V
C, Capacitance(pF)
10000
Ciss Coss
1000
Crss
100 1 10 100
FOR TEST CIRCUIT SEE FIGURE 13
40 60 80
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100
TJ = 150 C
ID, Drain-to-Source Current (A)
1000
10
100
100sec 1msec
TJ = 25 C
1
10 Tc = 25C Tj = 150C Single Pulse 1 1 10 VDS , Drain-toSource Voltage (V) 100 10msec
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF3711/3711S/3711L
120
VDS
LIMITED BY PACKAGE
RD
100
VGS RG
D.U.T.
+
ID , Drain Current (A)
80
-VDD
VGS
60
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS 90%
20
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF3711/3711S/3711L
15V
EAS , Single Pulse Avalanche Energy (mJ)
1400
TOP BOTTOM
1200 1000 800 600 400 200 0 25 50 75 100 125
VDS
L
DRIVER
ID 13A 19A 30A
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRF3711/3711S/3711L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+ +
-
RG
* * * *
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRF3711/3711S/3711L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103)
10.54 (.415) 10.29 (.405)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER
DATE CODE YEAR 7 = 1997 WEEK 19 LINE C
8
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IRF3711/3711S/3711L
D2Pak Package Outline
D2Pak Part Marking Information
THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L
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9
IRF3711/3711S/3711L
TO-262 Package Outline
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C"
10
INTERNATIONAL RECTIFIER LOGO PART NUMBER DATE CODE
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IRF3711/3711S/3711L
D2Pak Tape & Reel Information
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073) Notes:
1.65 (.065)
11.60 (.457) 11.40 (.449)
TRL
Repetitive rating; pulse width limited by max. junction temperature. Starting T(.429)25C, L = 1.0mH 1.25 (.049) 10.90 J = 10.70 (.421) RG = 25, IAS = 30A. 16.10 (.634)
15.90 (.626) 1.75 (.069)
15.42 (.609) 15.22 (.601)
23.90 (.941) Pulse width 400s; duty cycle 2%.
24.30 (.957)
This is only applied to TO-220AB package
4.72 (.136) 4.52 (.178)
FEED DIRECTION
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941)
Data and specifications subject to change without notice. 4 This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 Segundo, California 90245, USA Tel: (310) 252-7105 IR WORLD HEADQUARTERS: 233 Kansas St., El(1.197) MAX. TAC Fax: (310) 252-7903 26.40 (1.039) 4 24.40 (.961) Visit us at www.irf.com for sales contact information. 11/01 3
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