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| 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package SOT-363 A D2 G1 S1 NEW PRODUCT Dim A B C D F H J M Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 KXX S2 G2 D1 BC 0.65 Nominal Mechanical Data * * * * * Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K72 Weight: 0.006 grams (approx.) K H K L M J D F L All Dimensions in mm Maximum Ratings Drain-Source Voltage @ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ 100C Pulsed VGSS ID Pd RqJA Tj, TSTG 2N7002DW 60 60 20 40 115 73 800 200 1.60 625 -55 to +150 Units V V V mA mW mW/C K/W C Characteristic Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage (Note 1) Drain Current (Note 1) Total Power Dissipation Derating above TA = 25C (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width 300ms, duty cycle 2%. DS30120 Rev. 2P-1 1 of 3 2N7002DW NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TA = 25C unless otherwise specified Symbol BVDSS @ TC = 25C @ TC = 125C IDSS IGSS VGS(th) @ Tj = 25C @ Tj = 125C RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 3/4 3/4 1.0 3/4 0.5 80 3/4 3/4 3/4 3/4 3/4 Typ 70 3/4 3/4 3/4 3.2 4.4 1.0 3/4 22 11 2.0 7.0 11 Max 3/4 1.0 500 10 2.0 7.5 13.5 3/4 3/4 50 25 5.0 20 20 Unit V A nA V W A mS pF pF pF ns ns VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID =-250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width 300ms, duty cycle 2%. DS30120 Rev. 2P-1 2 of 3 2N7002DW 1.0 NEW PRODUCT 0.8 ID, DRAIN-SOURCE CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 7 Tj = 25C 6 5 VGS = 5.0V 5.5V 4 3 2 1 0 5.0V 0.4 VGS = 10V 0.2 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 5 4 1.5 VGS = 10V, ID = 0.5A RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.0 VGS = 5.0V, ID = 0.05A ID = 50mA 3 2 ID = 500mA 0.5 1 0 0 -55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage DS30120 Rev. 2P-1 3 of 3 2N7002DW |
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