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 Power F-MOS FETs
2SK2383
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
15.50.5
4.5
3.20.1
10.0
3.00.3
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
5
26.50.5
5
23.4 22.00.5
2.0 1.2
5
18.60.5
5 5
4.0 2.00.2 1.10.1
2.0
0.70.1
s Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 30 13 26 170 100 3 150 -55 to +150 Unit V V
5.450.3
3.30.3 0.70.1
5.450.3
5.50.3
5
1
2
3
A A mJ W C C
1: Gate 2: Drain 3: Source TOP-3E Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25C Ta = 25C
L = 2mH, IL = 13A, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 150V, ID = 7A VGS = 10V, RL = 21.4 Conditions VDS = 400V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 7A VDS = 25V, ID = 7A IDR = 13A, VGS = 0 1700 VDS = 20V, VGS = 0, f = 1MHz 300 120 30 70 90 210 1.25 41.67 5 500 1 0.45 8 -1.7 5 0.6 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns ns C/W C/W
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere
2.0
1
Power F-MOS FETs
Area of safe operation (ASO)
100 IDP 120
2SK2383
PD Ta
Allowable power dissipation PD (W)
(1) TC=Ta (2) Without heat sink (PD=3W) 100
IAS L-load
TC=25C
Non repetitive pulse TC=25C
Drain current ID (A)
10
DC 1ms
1
80 (1) 60
Avalanche current IAS (A)
ID
t=100s
100
30
10 170mJ 3
10ms 100ms
40
1
0.1
20 (2)
0.3
0.01 1 10 100 1000
0 0 20 40 60 80 100 120 140 160
0.1 0.1
0.3
1
3
10
Drain to source voltage VDS (V)
Ambient temperature Ta (C)
L-load (mH)
ID VGS
10 VDS=25V 6
Vth TC
50 VDS=25V ID=1mA 5
VDS VGS
TC=25C
8
Drain to source voltage VDS (V)
Gate threshold voltage Vth (V)
40
Drain current ID (A)
4
6
30
3
4
20 ID=26A
2
2
TC=150C 100C 0C 25C
1
10
13A 6.5A
0 0 1 2 3 4 5 6 7
0 0 25 50 75 100 125 150
0 0 5 10 15 20 25 30
Gate to source voltage VGS (V)
Case temperature TC (C)
Gate to source voltage VGS (V)
RDS(on) ID
Drain to source ON-resistance RDS(on) ()
1.2 16
| Yfs | ID
Forward transfer admittance |Yfs| (S)
VDS=25V TC=25C
Ciss, Coss, Crss VDS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
10000 f=1MHz TC=25C Ciss
VGS=10V 1.0 TC=150C
14 12 10 8 25C 100C
TC=0C
1000
0.8 100C 0.6 25C
100
150C 6 4 2 0
Coss Crss
0.4
0C 0.2
10
0 0 2 4 6 8 10 12 14 16
1 0 40 80 120 160 200
0
2
4
6
8
10
12
14
16
Drain current ID (A)
Drain current ID (A)
Drain to source voltage VDS (V)
2
Power F-MOS FETs
VDS, VGS Qg
300 ID=13A 12 VDS
2SK2383
Drain to source voltage VDS (V)
250
10
200 VGS 150
8
6
100
4
50
2
0 0 10 20 30 40 50
0 60
Gate charge amount Qg (nC)
Gate to source voltage VGS (V)
3


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