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| Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.50.5 4.5 3.20.1 10.0 3.00.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 5 26.50.5 5 23.4 22.00.5 2.0 1.2 5 18.60.5 5 5 4.0 2.00.2 1.10.1 2.0 0.70.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 30 13 26 170 100 3 150 -55 to +150 Unit V V 5.450.3 3.30.3 0.70.1 5.450.3 5.50.3 5 1 2 3 A A mJ W C C 1: Gate 2: Drain 3: Source TOP-3E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 2mH, IL = 13A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 150V, ID = 7A VGS = 10V, RL = 21.4 Conditions VDS = 400V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 7A VDS = 25V, ID = 7A IDR = 13A, VGS = 0 1700 VDS = 20V, VGS = 0, f = 1MHz 300 120 30 70 90 210 1.25 41.67 5 500 1 0.45 8 -1.7 5 0.6 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns ns C/W C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere 2.0 1 Power F-MOS FETs Area of safe operation (ASO) 100 IDP 120 2SK2383 PD Ta Allowable power dissipation PD (W) (1) TC=Ta (2) Without heat sink (PD=3W) 100 IAS L-load TC=25C Non repetitive pulse TC=25C Drain current ID (A) 10 DC 1ms 1 80 (1) 60 Avalanche current IAS (A) ID t=100s 100 30 10 170mJ 3 10ms 100ms 40 1 0.1 20 (2) 0.3 0.01 1 10 100 1000 0 0 20 40 60 80 100 120 140 160 0.1 0.1 0.3 1 3 10 Drain to source voltage VDS (V) Ambient temperature Ta (C) L-load (mH) ID VGS 10 VDS=25V 6 Vth TC 50 VDS=25V ID=1mA 5 VDS VGS TC=25C 8 Drain to source voltage VDS (V) Gate threshold voltage Vth (V) 40 Drain current ID (A) 4 6 30 3 4 20 ID=26A 2 2 TC=150C 100C 0C 25C 1 10 13A 6.5A 0 0 1 2 3 4 5 6 7 0 0 25 50 75 100 125 150 0 0 5 10 15 20 25 30 Gate to source voltage VGS (V) Case temperature TC (C) Gate to source voltage VGS (V) RDS(on) ID Drain to source ON-resistance RDS(on) () 1.2 16 | Yfs | ID Forward transfer admittance |Yfs| (S) VDS=25V TC=25C Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25C Ciss VGS=10V 1.0 TC=150C 14 12 10 8 25C 100C TC=0C 1000 0.8 100C 0.6 25C 100 150C 6 4 2 0 Coss Crss 0.4 0C 0.2 10 0 0 2 4 6 8 10 12 14 16 1 0 40 80 120 160 200 0 2 4 6 8 10 12 14 16 Drain current ID (A) Drain current ID (A) Drain to source voltage VDS (V) 2 Power F-MOS FETs VDS, VGS Qg 300 ID=13A 12 VDS 2SK2383 Drain to source voltage VDS (V) 250 10 200 VGS 150 8 6 100 4 50 2 0 0 10 20 30 40 50 0 60 Gate charge amount Qg (nC) Gate to source voltage VGS (V) 3 |
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