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  Datasheet File OCR Text:
 Power F-MOS FETs
2SK3027 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
unit: mm
4.60.2 3.20.1 9.90.3 2.90.2
4.10.2 8.00.2 Solder Dip
13.7-0.2
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.00.3
3.00.2
s Applications
+0.5
1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123
2.60.1 0.70.1
s Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 60 20 50 100 125 60 2 150 -55 to +150 Unit V V A A mJ
7
1: Gate 2: Drain 3: Source TO-220E Package (a)
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25C Ta = 25C
Internal Connection
W C C
S G D
L = 0.1mH, IL = 50A, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 30V, ID = 25A VGS = 10V, RL = 1.2 Conditions VDS = 50V, VGS = 0 VGS = 20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 25A VGS = 4V, ID = 25A VDS = 10V, ID = 25A IDR = 25A, VGS = 0 3600 VDS = 10V, VGS = 0, f = 1MHz 1250 680 20 65 250 960 2.08 62.5 25 60 1 8 11 49 -1.2 2.5 12 17 min typ max 10 10 Unit A A V V m m S V pF pF pF ns ns ns ns C/W C/W
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere
1


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