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2SK410
Silicon N-Channel MOS FET
Application
HF/VHF power amplifier
Features
* * * * * * * High breakdown voltage You can decrease handling current. Included gate protection diode No secondary-breakdown Wide area of safe operation Simple bias circuitry No thermal runaway
Outline
2SK410
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25C Symbol VDSS VGSS ID Pch* Tch Tstg
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Ratings 180 20 8 120 150 -55 to +150
Unit V V A W C C
Electrical Characteristics (Ta = 25C)
Item Power output Drain efficiency Drain to source breakdown voltage Gate to source breakdown voltage Gate to source cutoff voltage Drain current Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power output Power gain Note: 1. Pulse Test Symbol Min PO V(BR)DSS V(BR)GSS VGS(off) I DSS VDS(on) |yfs| Ciss Coss Crss PO PG 140 -- 180 20 0.5 -- -- 0.9 -- -- -- -- -- Typ 180 80 -- -- -- -- 3.8 1.25 440 75 0.5 100 17 Max -- -- -- -- 3.0 1.0 6.0 -- -- -- -- -- -- Unit W % V V V mA V S pF pF pF WPEP dB Test conditions VDD = 80 V, f = 28 MHz, I DQ = 0.1 A, Pin = 5 W I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 I D = 1 mA, VDS = 10 V*1 VDS = 140 V, VGS = 0 I D = 4 A, VGS = 10 V*1 I D = 3 A, VDS = 20 V*1 VGS = 5 V, VDS = 0, f = 1 MHz VGS = -5 V, VDS = 50 V, f = 1 MHz VGD = -50 V, f = 1 MHz VDD = 80 V, f = 28 MHz, f = 20 kHz, IMD -30 dB
CAUTION: OPERATING HAZARDS Beryllium Oxide Ceramics have been employed in these products. Since dust or fume of the material is highly poison to the human body, please do not treat them mechanically or chemically in the manner which might expose them to the air. And it should never be thrown out with general industrial or domestic waste.
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2SK410
Figure 1 Power vs. Temperature Derating
Figure 2 Maximum Safe Operation Area
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2SK410
Figure 3 Typical Output Characteristics
Figure 4 Typical Transfer Characteristics
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2SK410
Figure 5 Forward Transfer Admittance vs. Drain Current
Figure 6 Input Capacitance vs. Gate to Source Voltage
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2SK410
Figure 7 Output Capacitance vs. Drain to Source Voltage
Figure 8 Output Power, Drain Efficiency vs. Input Power
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2SK410
Figure 9 Output Power vs. Input Power (2 Tones)
Figure 10 Inter-Modulation Distortion vs. Output Power
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2SK410
Figure 11 28 MHz Pout Test Circuit
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2SK410
Package Dimensions
Unit: mm
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2SK410
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
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