View ADG704_21173.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

a
FEATURES +1.8 V to +5.5 V Single Supply 2.5 (Typ) On Resistance Low On-Resistance Flatness -3 dB Bandwidth >200 MHz Rail-to-Rail Operation 10-Lead SOIC Package Fast Switching Times tON 20 ns tOFF 13 ns Typical Power Consumption (<0.01 TTL/CMOS Compatible APPLICATIONS Battery Powered Systems Communication Systems Sample-and-Hold Systems Audio Signal Routing Data Acquisition System Video Switching
Low Voltage 4
CMOS , 4-Channel Multiplexer ADG704
FUNCTIONAL BLOCK DIAGRAM
ADG704
S1 S2 D S3 S4
W)
1 OF 4 DECODER
A0
A1
EN
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG704 is a CMOS analog multiplexer, comprising four single channels. This multiplexer is designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage currents and high bandwidths. The on resistance profile is very flat over the full analog signal range. This ensures excellent linearity and low distortion when switching audio signals. Fast switching speed also makes the part suitable for video signal switching. The ADG704 can operate from a single supply range of +1.8 V to +5.5 V, making it ideal for use in battery powered instruments and with the new generation of DACs and ADCs from Analog Devices. The ADG704 switches one of four inputs to a common output, D, as determined by the 3-bit binary address lines, A0, A1 and EN. A Logic "0" on the EN pin disables the device. Each switch of the ADG704 conducts equally well in both directions when ON. The ADG704 exhibits break-before-make switching action. The ADG704 is available in 10-lead SOIC package.
1. +1.8 V to +5.5 V Single Supply Operation. The ADG704 offers high performance and is fully specified and guaranteed with +3 V and +5 V supply rails. 2. Very Low RON (4.5 Max at 5 V, 8 Max at 3 V). At supply voltage of +1.8 V, RON is typically 35 over the temperature range. 3. Low On-Resistance Flatness. 4. -3 dB Bandwidth Greater than 200 MHz. 5. Low Power Dissipation. CMOS construction ensures low power dissipation. 6. Fast tON/tOFF. 7. Break-Before-Make Switching Action. 8. 10-Lead SOIC Package.
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 1999
10%, ADG704-SPECIFICATIONS1 (V = +5 Vnoted.) GND = 0 V. All Specifications -40 C to +85 C, unless otherwise
DD
Parameter ANALOG SWITCH Analog Signal Range On-Resistance (RON) On-Resistance Match Between Channels (RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD Charge Injection Off Isolation
B Version -40 C to +25 C +85 C 0 V to VDD 2.5 4 4.5 0.1 0.4 0.75 1.2 0.01 0.1 0.01 0.1 0.01 0.1
Units V typ max typ max typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ dB typ dB typ MHz typ pF typ pF typ pF typ
Test Conditions/Comments
VS = 0 V to VDD, IDS = -10 mA; Test Circuit 1 VS = 0 V to VDD, IDS = -10 mA VS = 0 V to VDD, IDS = -10 mA VDD = +5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = VD = 4.5 V or 1 V; Test Circuit 3
0.3 0.3 0.3 2.4 0.8
0.005
0.1
VIN = VINL or VINH
14 20 6 13 8 1 3 -60 -80 -62 -82 200 9 37 54
Channel-to-Channel Crosstalk
Bandwidth -3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD
RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 , CL = 35 pF VS1 = VS2 = 3 V, Test Circuit 5 VS = 2 V, RS = 0 , CL = 1 nF; Test Circuit 6 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 8 RL = 50 , CL = 5 pF; Test Circuit 9
0.001 1.0
A typ A max
VDD = +5.5 V Digital Inputs = 0 V or 5 V
NOTES 1 Temperature ranges are as follows: B Version: -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
-2-
REV. A
ADG704
SPECIFICATIONS1 (V
Parameter ANALOG SWITCH Analog Signal Range On-Resistance (RON) On-Resistance Match Between Channels (RON)
DD
= +3 V
10%, GND = 0 V. All Specifications -40 C to +85 C, unless otherwise noted.)
B Version -40 C to +25 C +85 C 0 V to VDD 5 8
Units V typ max typ max typ nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ dB typ dB typ MHz typ pF typ pF typ pF typ
Test Conditions/Comments
4.5
VS = 0 V to VDD, IDS = -10 mA; Test Circuit 1 VS = 0 V to VDD, IDS = -10 mA VS = 0 V to VDD, IDS = -10 mA VDD = +3.3 V VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = VD = 3 V or 1 V; Test Circuit 3
0.1 0.4 2.5 0.01 0.1 0.01 0.1 0.01 0.1
On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD Charge Injection Off Isolation
0.3 0.3 0.3 2.0 0.4
0.005
0.1
VIN = VINL or VINH
16 24 8 16 9 1 3 -60 -80 -62 -82 200 9 37 54
Channel-to-Channel Crosstalk
Bandwidth -3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD
RL = 300 , CL = 35 pF VS = 2 V, Test Circuit 4 RL = 300 , CL = 35 pF VS = 2 V, Test Circuit 4 RL = 300 , CL = 35 pF VS1 = VS2 = 2 V, Test Circuit 5 VS = 1.5 V, RS = 0 , CL = 1 nF; Test Circuit 6 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 8 RL = 50 , CL = 5 pF; Test Circuit 9
0.001 1.0
A typ A max
VDD = +3.3 V Digital Inputs = 0 V or 3 V
NOTES 1 Temperature ranges are as follows: B Version: -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
REV. A
-3-
ADG704
ABSOLUTE MAXIMUM RATINGS 1
(TA = +25C unless otherwise noted)
TERMINOLOGY
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +6 V Analog, Digital Inputs2 . . . . . . . . . . . -0.3 V to VDD +0.3 V or 30 mA, Whichever Occurs First Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA (Pulsed at 1 ms, 10% Duty Cycle Max) Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150C SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220C ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given.
VDD GND S D A0, A1 EN RON RON RFLAT(ON)
ID (OFF) IS (OFF) ID, IS (ON) VD (VS) CS (OFF) CD (OFF) CD, CS (ON) tON tOFF
ORDERING GUIDE
tD Package Option2 RM-10 Crosstalk
Model ADG704BRM
Temperature Range -40C to +85C
Brand1 S9B
NOTES 1 Brand = Due to small package size, these three characters represent the part number. 2 RM = SOIC.
Off Isolation Charge Injection Bandwidth On Response On Loss
PIN CONFIGURATION (10-Lead SOIC)
A0 1 S1 2 GND 3
10
A1 S2
ADG704
9
TOP VIEW 8 D (Not to Scale) 7 S4 S3 4
6
Most positive power supply potential. Ground (0 V) reference. Source terminal. May be an input or output. Drain terminal. May be an input or output. Logic control inputs. Logic control input. Ohmic resistance between D and S. On resistance match between any two channels i.e., RONmax-RONmin. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Drain leakage current with the switch "OFF." Source leakage current with the switch "OFF." Channel leakage current with the switch "ON." Analog voltage on terminals D, S. "OFF" switch source capacitance. "OFF" switch drain capacitance. "ON" switch capacitance. Delay between applying the digital control input and the output switching on. See Test Circuit 4. Delay between applying the digital control input and the output switching off. "OFF" time or "ON" time measured between the 90% points of both switches, when switching from one address state to another. See Test Circuit 5. A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. A measure of unwanted signal coupling through an "OFF" switch. A measure of the glitch impulse transferred from the digital input to the analog output during switching. The frequency at which the output is attenuated by -3 dBs. The frequency response of the "ON" switch. The voltage drop across the "ON" switch, seen on the On Response vs. Frequency plot as how many dBs the signal is away from 0 dB at very low frequencies.
Table I. Truth Table
EN 5
VDD
A1 X 0 0 1 1
A0 X 0 1 0 1
EN 0 1 1 1 1
ON Switch NONE 1 2 3 4
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG704 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
-4-
REV. A
Typical Performance Characteristics-ADG704
6.0 5.5 5.0 4.5 4.0 3.5
RON - 10m
TA = +25 C
1m
VDD = +5V
VDD = +2.7V ISUPPLY - A
A0 TOGGLED 100 10 1
3.0 2.5 2.0 1.5 1.0 0.5 0 0
VDD = +3.0V VDD = +4.5V
EN TOGGLED
VDD = +5.0V
100n 10n 1n 100
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VD OR VS - DRAIN OR SOURCE VOLTAGE - Volts
5.0
1k
10k 100k FREQUENCY - Hz
1M
10M
Figure 1. On Resistance as a Function of VD (VS) Single Supplies
6.0 5.5 5.0 4.5 4.0 3.5 +25 C VDD = +3.0V
Figure 4. Supply Current vs. Input Switching Frequency
-30 VDD = +5V, +3V -40 -50 OFF ISOLATION - dB
3.0 +85 C
-60 -70 -80 -90 -100 -110
RON -
3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 VD OR VS - DRAIN OR SOURCE VOLTAGE - Volts -40 C
-120 -130 10k
100k
1M 10M FREQUENCY - Hz
100M
Figure 2. On Resistance as a Function of VD (VS) for Different Temperatures; VDD = 3 V
Figure 5. Off Isolation vs. Frequency
6.0 5.5 5.0 4.5 4.0 3.5
RON - CROSSTALK - dB
-30
VDD = +5.0V
VDD = +5V, +3V -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 10k
3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VD OR VS - DRAIN OR SOURCE VOLTAGE - Volts 5.0 -40 C +85 C +25 C
100k
1M 10M FREQUENCY - Hz
100M
Figure 3. On Resistance as a Function of VD (VS) for Different Temperatures; VDD = 5 V
Figure 6. Crosstalk vs. Frequency
REV. A
-5-
ADG704
0 VDD = +5V
25 TA = +25 C 20 15 VDD = +5V
ON RESPONSE - dB
-2
VDD = +3V 10 QINJ - pC 5 0
-4
-5 -10
-6 10k
100k
1M 10M FREQUENCY - Hz
100M
-15 0.0
0.5
1.0
1.5 2.0 2.5 3.0 3.5 SOURCE VOLTAGE - Volts
4.0
4.5
5.0
Figure 7. On Response vs. Frequency
APPLICATIONS
VDD V+ CH1 S1 75
Figure 8. Charge Injection vs. Source Voltage
. . .
CH4
. . .
S4
D A=2 250 75
VOUT RL 75
75
ADG704
250 A0 A1 EN
Figure 9. 4-Channel Video Multiplexing
-6-
REV. A
ADG704 Test Circuits
IDS V1 S D IS (OFF) A VS S D ID (OFF) A VD
ID (ON) S D A VD
VS
RON = V1/IDS
VS
Test Circuit 1. On Resistance
0.1 F VDD
Test Circuit 2. Off Leakage
Test Circuit 3. On Leakage
VDD S VS IN D RL 300 CL 35pF VIN VOUT VOUT 90% 90% 50% 50%
GND
tON
tOFF
Test Circuit 4. Switching Times
0.1 F
VDD
VDD VS1 S1 S4
. . .
. . .
VIN D RL 300 CL 35pF 0V VOUT VOUT 0V 50%
50%
50%
VS4
50%
VIN GND
tD
tD
Test Circuit 5. Break-Before-Make Time Delay, tD
VDD VDD RS VS DECODER GND EN A0 A1 S D CL 1nF VOUT QINJ = CL VOUT VOUT VIN VOUT SW ON SW OFF
Test Circuit 6. Charge Injection
REV. A
-7-
ADG704
0.1 F VDD 0.1 F VDD VDD
S1
. . .
S4
. . . . .
D RL 50
VOUT
VOUT
S1 D S2 RL 50
VS
VIN GND
VS
IN GND CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG |VS/VOUT|
Test Circuit 7. Off Isolation
0.1 F VDD
Test Circuit 8. Channel-to-Channel Crosstalk
VDD S D RL 50 IN GND VOUT
VS
Test Circuit 9. Bandwidth
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
10-Lead SOIC (RM-10)
0.122 (3.10) 0.114 (2.90)
10
6
0.122 (3.10) 0.114 (2.90)
1 5
0.199 (5.05) 0.187 (4.75)
PIN 1 0.0197 (0.50) BSC 0.120 (3.05) 0.112 (2.85) 0.043 (1.10) MAX 0.028 (0.70) 0.016 (0.40) 0.120 (3.05) 0.112 (2.85)
0.037 (0.94) 0.031 (0.78)
6 0.006 (0.15) 0.012 (0.30) SEATING 0 PLANE 0.009 (0.23) 0.002 (0.05) 0.006 (0.15) 0.005 (0.13)
-8-
REV. A
PRINTED IN U.S.A.
C3383a-0-6/99

▲Up To Search▲

Price & Availability of ADG704

	To Download ADG704 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .