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| HA16654A, HA16664A Series PWM Controlled Switching Regulator The HA16654A and HA16664A are PWM control switching regulator ICs which drive a power MOSFET at high speed and high frequency. The standby current is limited to as small as 1.5 mA (typ). These devices incorporate totem pole circuits suited for high-speed push-pull operation at the output stage, accomplishing high-speed switching with rising time tr = 80 ns (typ) and falling time t f = 40 ns (typ) at 20 V swing. Functions * * * * * * Reference voltage circuit Triangular waveform oscillation circuit PWM comparator circuit Low-input malfunction protection circuit Output drive circuit Soft start and quick shut down Features * High speed switching: tr = 80 ns, tf = 40 ns (typ) when use exernal driver circuit * High frequency operation: HA16654A (f = 100 kHz to 500 kHz) HA16664A (f = 100 kHz to 200 kHz) Low power dissipation : 2 mA max in standby state * 5 V reference voltage * Low-input malfunction protection (High threshold voltage: 10 V Typ, Low threshold voltage: 8 V Typ) * Adjustable dead band width * Enlarged output pulse width control range (0 to 80%) * Soft start and quick shut down functions * Single output: totem pole HA16654A, HA16664A Series Ordering Information Type No. HA16654APS HA16654AFP HA16664APS HA16664AFP 100 kHz to 200 kHz Operating Frequency 100 kHz to 500 kHz Package DP-8 FP-14DA DP-8 FP-14DA Pin Arrangement * HA16654APS,HA16664APS * HA16654AFP,HA16664AFP NC 1 CT 1 RT 2 Vref 3 VIN 4 8 EI 7 DB 6 GND 5 OUT NC 2 CT 3 RT 4 Vref 5 VIN 6 NC 7 14 NC 13 NC 12 EI 11 DB 10 GND 9 OUT 8 NC (Top view) (Top view) Table 1 Symbol CT RT Vref VIN EI DB GND OUT Pin Function Pin Name Timing capacitor Timing resistor Reference voltage Input voltage Error input Dead band Ground Driver output 2 HA16654A, HA16664A Series Block Diagram DB 7 8 EI To under voltage lockout RT CT Vref VIN 2 1 Oscillator To Vref PWM Comparator VIN 3 To internal circuitry 5 OUT GND 4 Reference Regulator Under Voltage Lockout (Hysteresis Type) Output Stage 6 ERROR INPUT DB CT OUT Figure 1 Waveform Timing 3 HA16654A, HA16664A Series Absolute Maximum Ratings (Ta = 25C) Item Power supply voltage Collector current (Push-pull) Comparator input voltage RT input current Power dissipation Operation temperature range Storage temperature range Symbol VIN IO VCOM I RT PT Topr Tstg Rating +40 20 Vref + 0.3 1 680 -20 to +85 -55 to 125 Unit V mA V mA mW C C 1, 2 Notes Notes: 1. Ta 45C, if Ta > 45C, derate by 8.3 mW/C 2. Tjmax = j-a * Pcmax + Ta (j-a:Thermal resistance between junction and atmosphere at set board use) The wiring density and the material of the set board must be chosen for thermal conductance of efficacy board. Electrical Characteristics HA16654APS/AFP (Ta = 25C, VIN = 20 V, CT = 220 pF, RT = 27 k at f 500 kHz) Voltage Reference Item Output voltage Line regulation Symbol Vref Line Min 4.75 -- -- Load regulation Temperature stability Short circuit current Load VRTC I OS -- -- 10 Typ 5.00 -- 10 5 -26 35 Max 5.25 100 25 16 -- -- Unit V mV mV mV ppm/C mA Vref = 0 V VIN = 7.3 to 11 V VIN = 11 to 40 V I O = 0 to 10 mA Test Condition 4 HA16654A, HA16664A Series Oscillator Item Maximum frequency Minimum frequency Initial accuracy Voltage stability Symbol f max f min f dev f av Min 500 -- -- -- Typ -- -- -- -0.02 Max -- 100 10 1.0 Unit kHz kHz % kHz/V VIN = 11 to 40 V Test Condition CT = 220 pF CT = 560 pF PWM Item Maximum duty cycle Duty cycle accuracy Input bias current Symbol Du Ddev IB Min 80 -- -- Typ -- 1 -- Max -- 6 2.0 Unit % % A R1 = 13 k, R2 = 39 k VE1 = 4 V, VDB = 0 V or VE1 = 0 V, VDB = 4 V Test Condition Output Driver Item Sink current at Vin low Output low level Output high level Output rising time Output falling time High level threshold Low level threshold Hysteresis width Symbol I OS (Low) VOL VOH tr tf VTHH VTHL VHRS Min 0.6 -- Typ 1.5 0.86 Max -- 1.4 -- 150 100 11 9 2.5 Unit mA V V ns ns V V V Test Condition VIN = 6 V, VOUT = 0.4 V I O (sink) = 10 mA I O (source) = 10 mA Figure 3 Figure 3 UVL characteristics UVL characteristics UVL characteristics VIN - 2.2 -- -- -- 9 7.3 1.5 80 40 10 8 2.0 Total Current Item Standby current Operation current Symbol I CCS VCCL Min -- 5.0 Typ 1.5 9.0 Max 2.0 13.0 Unit mA mA Test Condition Figure 2 R1 = 13 k, R2 = 29 k, VIN = 20 V Figure 2 5 HA16654A, HA16664A Series A 13 k R1 27 k Vref VIN EI DB OUT Dummy Load (MOS FET) 2SD667 15 2SB647 I CCL I IN I CCS 39 k R2 RT G GND 220 pF 2,200 pF VIN 20 VIN h FE of 2SD667 and 2SD647 is defined as 60 min and 200 max Figure 2 ICCS * ICCL Measurement Circuit VIN 2SD667 OUT 2SB647 GND 15 2,200 pF Output 80% 20% tr Dummy Load (MOS FET) tf Figure 3 t r , tf Measurement Circuit HA16664APS/AFP (Ta = 25C, VIN = 20 V, CT = 560 pF, RT = 82 k at f 100 kHz) Voltage Reference Item Output voltage Line regulation Symbol Vref Line Min 4.75 -- -- Load regulation Temperature stability Short circuit current Load VRTC I OS -- -- 10 Typ 5.00 -- 10 5 -26 35 Max 5.25 100 25 16 -- -- Unit V mV mV mV ppm/C mA Vref = 0 V VIN = 7.3 to 11 V VIN = 11 to 40 V I O = 0 to 10 mA Test Condition 6 HA16654A, HA16664A Series Oscillator Item Maximum frequency Minimum frequency Initial accuracy Voltage stability Symbol f max f min f dev f av Min 200 -- -- -- Typ -- -- -- -0.02 Max -- 100 10 1.0 Unit kHz kHz % kHz/V VIN = 11 to 40 V Test Condition CT = 220 pF CT = 560 pF PWM Comparator Item Maximum duty cycle Duty cycle accuracy Input bias current Symbol Du Ddev IB Min 80 -- -- Typ -- 1.0 -- Max -- 6 2.0 Unit % % A R1 = 11 k, R2 = 39 k VEI = 4 V, VDB = 0 V or VEI = 0 V, VDB = 4 V Test Condition Output Driver Item Sink current at Vin low Output low level Output high level Output rising time Output falling time High level threshold Low level threshold Hysteresis width Symbol I OS (Low) VOL VOH tr tf VTHH VTHL VHRS Min 1.0 -- Typ 1.5 0.86 Max -- 1.4 -- 300 200 11 9 2.5 Unit mA V V ns ns V V V Test Condition VIN = 6 V, VOUT = 0.4 V I O (sink) = 10 mA I O (source) = 10 mA Figure 5 Figure 5 UVL characteristics UVL characteristics UVL characteristics VIN - 2.2 -- -- -- 9 7.3 1.5 80 40 10 8 2.0 Total Current Item Standby current Operation current Symbol I CCS VCCL Min -- 3.0 Typ 1.5 5.0 Max 2.0 7.0 Unit mA mA Test Condition Figure 4 R1 = 11 k, R2 = 39 k, VIN = 20 V Figure 4 7 HA16654A, HA16664A Series A 11 k R1 27 k Vref VIN EI DB OUT Dummy Load (MOS FET) 2SD667 15 2SB647 I CCL I IN I CCS 39 k R2 RT G GND 220 pF 2,200 pF VIN 20 VIN h FE of 2SD667 and 2SD647 is defined as 60 min and 200 max Figure 4 ICCS * ICCL Measurement Circuit VIN 2SD667 OUT 2SB647 GND 15 2,200 pF Output 80% 20% tr Dummy Load (MOS FET) tf Figure 5 t r * tf Measurement Circuit 8 HA16654A, HA16664A Series Characteristic Curves Vref Output Voltage vs. Temperature 5.10 Ref Output Voltage Vref (V) Ref Output Voltage Vref (V) 6.0 5.0 4.0 3.0 2.0 1.0 Ta = 25C Vref Rise Characteristics 5.00 4.90 4.80 -30 0 50 100 0 10 20 Input Voltage VIN (V) 30 40 Ambient Temperature Ta (C) Quick Shutdown Time vs. Soft Start Capacitance 25 Ta = 25C Quick Shutdown Time (ms) 20 20 25 Soft Start Time vs. Soft Start Capacitance Ta = 25C Soft Start Time (sec) 15 15 10 10 Vref HA16654A 13 or HA16664A Vref HA16654A 13 or HA16664A k 5 D.B CS 39 k k 5 D.B CS 39 k 0 20 40 60 80 100 0 20 40 60 80 100 Soft Start Capacitance C S ( F) Soft Start Capacitance C S ( F) 9 HA16654A, HA16664A Series Pulse Duty Cycle vs. Dead Band Voltage in PWM Comparator (HA16654A) 100 90 Pulse Duty Cycle (%) 80 70 60 50 40 30 20 10 0 0.6 0.7 0.8 0.9 f 500 kHz VIN = 20 V Pulse Duty Cycle (%) f 300 kHz f 100 kHz Pulse Duty Cycle vs. Dead Band Voltage in PWM Comparator (HA16664A) 100 90 80 70 60 50 40 30 20 10 0 0.6 0.7 0.8 0.9 f 200 kHz VIN = 20 V f 100 kHz Dead Band Voltage (V) Dead Band Voltage (V) f/f vs. Ambient Temperature (HA16654A) +10 f 500 kHz RT = 27 k CT = 220 pF +10 f/f vs. Ambient Temperature (HA16664A) ( f/f (%) 0 ) f/f (%) 0 f 100 kHz RT = 150 k CT = 330 pF ( ) f 100 kHz RT = 150 k CT = 330 pF ( ) -10 ( RT = 56 k pF) CT = 220 f 300 kHz -10 ( RT = 95 k pF) CT = 220 f 200 kHz -20 -20 0 20 40 60 80 -20 -20 0 20 40 60 80 Ambient Temperature Ta (C) Ambient Temperature Ta (C) 10 HA16654A, HA16664A Series Pulse Duty Cycle vs. Ambient Temperature (HA16654A) 60 Pulse Duty Cycle (%) ton/ton vs. Ambient Temperature (HA16654A) (CT = 220k pF) RT = 27 f 500 kHz 50 ton/ton (%) (CT = 330 pF) RT = 150 k f 100 kHz +10 (CT = 220k pF) RT = 27 f 500 kHz 0 (CT = 330 pF) RT = 150 k f 100 kHz -20 0 20 40 60 80 40 -10 Ambient Temperature Ta (C) 30 -20 0 20 40 60 80 Ambient Temperature Ta (C) Pulse Duty Cycle vs. Ambient Temperature (HA16664A) 60 Pulse Duty Cycle (%) ton/ton vs. Ambient Temperature (HA16664A) +10 ton/ton (%) (CT = 330 pF) RT = 150 k f 100 kHz (CT = 220k pF) RT = 95 f 200 kHz 50 0 ( CT = 330 pF ) RT = 150 k 40 f 100 kHz (CT = 220k pF) RT = 95 f 200 kHz -10 -20 0 20 40 60 80 Ambient Temperature Ta (C) 30 -20 0 20 40 60 80 Ambient Temperature Ta (C) 11 HA16654A, HA16664A Series OSC Frequency vs. Timing Resistor (HA16654A) 500 k 200 k OSC Frequency vs. Timing Resistor (HA16664A) Osc Frequency (Hz) Osc Frequency (Hz) CT =220 pF CT = 560 pF 200 k CT = 220 pF 150 k CT = 560 pF 100 k 10 k 20 k 50 k 100 k 200 k 100 k 10 k 20 k 50 k 100 k 200 k Timing Resistor RT (k ) Timing Resistor RT ( ) Formula for the oscillation frequency f f = 1 / [ {CT (RT + 1 x 103)(a RT + b) / (Vref - VBE)} + 100 x 10-9] CT : Timing capacitor (F) RT : Timing resistor () Vref : Reference voltage 5.0 (V) (Typ) VBE : Base-emitter voltage 0.65 (V) (Typ) The following table show empirical values of a and b for different values of CT. -2 a 1.2 -4 a (10-6) 1.3 b -6 b -8 1.4 CT (pF) 220 560 a -2.30 x 10-6 -8.37 x 10 -6 b 1.247 1.575 -10 200 1.6 300 400 500 600 CT (pF) 1.5 Also, f 4.35 / (CT RT) 12 HA16654A, HA16664A Series VIN Bias Point HA16654A (f 500 kHz) Ta = 25C 10 8 I IN (mA) HA16664A (f 100 kHz) Ta = 25C 10 8 Soft start area I IN (mA) Back up supply voltage Quick shutdown area 6 4 2 0 6 4 2 0 Back up supply voltage Quick shutdown area 1/RIN Low input malfunction prevention area 8 10 20 VIN (V) 30 40 Va Soft start area 1/RIN Low input malfunction prevention area 8 10 20 VIN (V) 30 40 Va Primary Control Forward Converter System Soft Start Capacitor AC 0.47 F R1 R.F.I Filter R2 VB RIN VOUT 13 k 39 k (11 k ) Error Input Dead Band GND OUT D667 B647 + Vref HA16654A (HA16664A) CT RT Power MOS FET HA17431 V IN + 220 pF (330 pF) 51 k CT RT 27 k (150 k ) 13 HA16654A, HA16664A Series Package Dimensions Unit: mm 9.6 10.6 Max 8 5 6.3 7.4 Max 1 0.89 4 1.3 2.54 Min 5.06 Max 1.27 Max 7.62 0.1 Min 0.25 - 0.05 0 - 15 Hitachi Code JEDEC EIAJ Mass (reference value) + 0.10 2.54 0.25 0.48 0.10 DP-8 Conforms Conforms 0.54 g Unit: mm 10.06 10.5 Max 14 8 5.5 1 7 *0.22 0.05 0.20 0.04 2.20 Max 7.80 - 0.30 1.15 + 0.20 1.42 Max 1.27 *0.42 0.08 0.40 0.06 0.10 0.10 0 - 8 0.70 0.20 0.15 0.12 M Hitachi Code JEDEC EIAJ Mass (reference value) FP-14DA -- Conforms 0.23 g *Dimension including the plating thickness Base material dimension 14 HA16654A, HA16664A Series Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 15 |
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