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 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 - August 1994 FEATURES * Compact E-LINE (TO92 style) package * 240 Volt BVDS * RDS(on)=4.3 Typical at VGS=2.5V * Low threshold * Fast switching APPLICATIONS * Earth recall and dialling switches * Electronic hook switches * Battery powered equipment * Telecoms and high voltage dc-dc converters
ZVN4424A/C
D G
G S
D S
SUFFIX A
SUFFIX C E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 240 260 1.5 40 750 -55 to +150 UNIT V mA A V mW C
ZVN4424A/C
ZVN4424A/C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-State Resistance Forward Transconductance (1) (2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS 240 0.8 1.3 1.8 100 10 100 0.8 1.4 4 4.3 0.4 0.75 110 15 3.5 2.5 5 40 16 200 25 15 5 8 60 25 5.5 6 TYP MAX. UNIT V V nA A A A S pF pF pF ns ns ns ns V DD 50V, I D =0.25A, V GEN=10V V DS=25V, V GS=0V, f=1MHz CONDITIONS. I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= 40V, V DS=0V V DS=240 V, V GS=0 V DS=190 V, V GS=0V, T=125C V DS=10 V, V GS=10V V GS=10V,I D=500mA V GS=2.5V,I D=100mA V DS=10V,I D=0.5A
I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf
(1)*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
(2)Sample Test
(3) Switching times measured with 50 source impedance and >5ns rise time on pulse generator
ZVN4424A/C
SPICE PARAMETERS
*ZVN4424 MODEL LAST REVISION 1/94 * .SUBCKT ZVN4424 30 40 50 * NODES: DRAIN GATE SOURCE M1 30 20 50 50 MOD1 L=1 W=1 RG 40 20 200 RL 30 50 240E6 D1 50 30 DIODE1 .MODEL MOD1 NMOS VT0=1.25 RS=2.34 RD=1.634 IS=1E-15 KP=5.319 +CGS0=101P CGD0=4P CBD=66.2P PB=1 .MODEL DIODE1 D IS=5.516E-13 RS=0.2084 N=1.0078 .ENDS ZVN4424 For clarification of the above or for technical enquires generally please contact the Applications Dept. at Zetex plc.
(c)1992 ZETEX plc The copyright in this model and the design embodied belonging to Zetex plc ("Zetex"). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for the purpose is given and no liability in respect of any use is accepted by Zetex plc, its distributors or agents.
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Fax: (44)161-627 5467 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c)Zetex plc 1997 Internet: http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.


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