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| SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 4 - OCTOBER 1995 FEATURES * 240 Volt BVDS * Extremely low RDS(on)=4.3 * Low threshold and Fast switching APPLICATIONS * Earth recall and dialling switches * Electronic hook switches * Battery powered equipment * Telecoms and high voltage dc-dc convertors PARTMARKING DETAILS COMPLEMENTARY TYPE ZVN4424 ZVP4424G ZVN4424G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 240 500 1.5 40 2.5 -55 to +150 UNIT V mA A V W C 3 - 415 ZVN4424G ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage On State Drain-Current Zero Gate Voltage Drain Current Static Drain-Source On-State Resistance Forward Transconductance (1) (2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BVDSS VGS(th) IGSS ID(on) IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 0.4 4 4.3 0.75 110 15 3.5 2.5 5 40 16 200 25 15 5 8 60 25 0.8 1.4 10 100 5.5 6 240 0.8 1.3 1.8 100 TYP MAX. UNIT V V nA A A A S pF pF pF ns ns ns ns VDD 50V, ID =0.25A, VGEN=10V VDS=25V, VGS=0V, f=1MHz CONDITIONS. ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS= 40V, VDS=0V VDS=10V, VGS=10V VDS=240 V, VGS=0V VDS=190 V, VGS=0V, T=125C VGS=10V,ID=500mA* VGS=2.5V,ID=100mA* VDS=10V,ID=0.5A (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 416 ZVN4424G TYPICAL CHARACTERISTICS 1.6 300s Pulsed Test 1.4 VGS=10V 1.6 ID - Drain Current (Amps) ID - Drain Current (Amps) 1.2 1.0 5V 4V 3V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 300s Pulsed Test VDS=10V 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 2V 2.5V VDS - Drain Source Voltage (Volts) VGS - Gate Source Voltage (Volts) Saturation Characteristics Transfer Characteristics 800 800 gfs-Transconductance (mS) gfs-Transconductance (mS) 600 600 400 300s Pulsed Test VDS=10Vz 400 300s Pulsed Test VDS=10V 200 200 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 1 2 3 4 5 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current RDS(on)-Drain Source On Resistance () Transconductance v gate-source voltage 100 Normalised RDS(on) and VGS(th) VGS=2V 2.4 2.0 1.6 1.2 0.8 0.4 0 -50 -25 0 25 50 75 100 125 150 VGS=VDS ID=1mA VGS=10V ID=0.5A 2.5V 3V 10 10V 300s Pulsed Test 1.0 0.01 0.1 1.0 10 ID-Drain Current (Amps) Junction Temperature (C) On-resistance vs Drain Current Normalised RDS(on) and VGS(th) vs Temperature 3 - 417 ZVN4424G TYPICAL CHARACTERISTICS 250 14 VGS-Gate Source Voltage (Volts) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 C-Capacitance (pF) 200 Note:VGS=0V Note:ID=400mA VDD= 20V 50V 100V 150 Ciss 100 Coss Crss 0 0.1 1 10 100 50 18 20 VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 418 |
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