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 ZXM61P03F
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.0A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * * * * * * * * * Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package
SOT23
APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control
ORDERING INFORMATION
DEVICE ZXM61P03FTA ZXM61P03FTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL
Top View
3000 units 10000 units
DEVICE MARKING * P03
PROVISIONAL ISSUE A - JULY 1999 81
ZXM61P03F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V GS=-10V; T A=25C)(b) (V GS=-10V; T A=70C)(b) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A=25C (a) Linear Derating Factor Power Dissipation at T A=25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD T j:T stg LIMIT -30 20 -1.1 -0.9 -4.3 -0.88 -4.3 625 5 806 6.4 -55 to +150 UNIT V V A A A A mW mW/C mW mW/C C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 200 155 UNIT C/W C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
PROVISIONAL ISSUE A - JULY 1999 82
ZXM61P03F
CHARACTERISTICS
10
Refer Note (a)
Max Power Dissipation (Watts)
1.0 0.8
Refer Note (b) Refer Note (a)
-ID - Drain Current (A)
1
0.6 0.4 0.2 0
100m
DC 1s 100ms 10ms 1ms 100us
10m
0.1
1
10
100
0
20
40
60
80
100
120
140
160
-VDS - Drain-Source Voltage (V)
T - Temperature (C)
Safe Operating Area
Derating Curve
Thermal Resistance (C/W)
Refer Note (b)
Thermal Resistance (C/W)
180 160 140 120 100 80 60 40 20
D=0.2 D=0.1 D=0.05 Single Pulse D=0.5
240
Refer Note (a)
200 160 120 80 40
D=0.2 D=0.1 D=0.05 Single Pulse
D=0.5
0 0.0001
0.001
0.01
0.1
1
10
0 0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
PROVISIONAL ISSUE A - JULY 1999 83
ZXM61P03F
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge(3) V SD t rr Q rr 14.8 7.7 -0.95 V ns nC T j=25C, I S=-0.6A, V GS=0V T j=25C, I F=-0.6A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 1.9 2.9 8.9 5.0 4.8 0.62 1.3 ns ns ns ns nC nC nC V DS=-24V,V GS=-10V, I D =-0.6A (Refer to test circuit) V DD =-15V, I D=-0.6A R G=6.2, R D=25 (Refer to test circuit) C iss C oss C rss 140 45 20 pF pF pF V DS=-25 V, V GS=0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 0.44 -1.0 0.35 0.55 -30 -1 100 V A nA V S I D=-250A, V GS=0V V DS=-30V, V GS=0V V GS= 20V, V DS=0V I D =-250A, V DS= V GS V GS=-10V, I D=-0.6A V GS=-4.5V, I D=-0.3A V DS=-10V,I D=-0.3A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999 84
ZXM61P03F
TYPICAL CHARACTERISTICS
10
+25C
10
+150C
-ID - Drain Current (A)
-ID - Drain Current (A)
9V 8V 7V 6V 10V 5V
-VGS
9V 8V 7V 6V 10V
-VGS 5V 4V
4V
1
3V
1
3V
100m
0.1
1
10
100
100m
0.1
10
100
-VDS - Drain-Source Voltage (V)
-VDS - Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
10
Normalised RDS(on) and VGS(th)
1.7
RDS(on)
-ID - Drain Current (A)
T=+150C
1.5
VGS=-10V
1
T=+25C
1.3 1.1 0.9 0.7 0.5 -100
ID=-0.6A
100m
VGS=VDS ID=-250uA VGS(th)
VDS=-10V
10m
1.5
2.5
3.5
4.5
0
+100
+200
-VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (C)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th) v Temperature
-ISD - Reverse Drain Current (A)
10
RDS(on) - Drain-Source On-Resistance ()
10
Vg=-3V
1
1
Vg=-5V
100m
T=+150C T=+25C
Vg=-10V
100m
0.1
1
10
10m
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-ID - Drain Current (A)
-VSD - Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - JULY 1999 85
ZXM61P03F
TYPICAL CHARACTERISTICS
-VGS - Gate-Source Voltage (V)
300
Vgs=0V f=1MHz
14
ID=-0.6A
C - Capacitance (pF)
250 200 150 100 50 0
Ciss Coss Crss
12 10
VDS=-24V
8 6 4 2 0 0 0.5 1
VDS=-15V
0.1
1
10
100
1.5
2
2.5
3
3.5
4
4.5
-VDS - Drain Source Voltage (V)
Q -Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
PROVISIONAL ISSUE A - JULY 1999 86
ZXM61P03F
PACKAGE DIMENSIONS PAD LAYOUT DETAILS
DIM
Millimetres Min Max 3.05 1.40 1.10 0.53 0.15
N
Inches Min 0.105 0.047 - 0.0145 0.0033 NOM 0.075 0.10 2.50 0.0004 0.0825 NOM 0.037 0.004 0.0985 Max 0.120 0.055 0.043 0.021 0.0059 A B C D F G K L N 2.67 1.20 - 0.37 0.085 NOM 1.9 0.01 2.10 NOM 0.95
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c)Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - JULY 1999 88


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