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| PD- 91330F SMPS MOSFET Applications l High frequency DC-DC converters IRF7413 HEXFET(R) Power MOSFET RDS(on) max(mW) 11@VGS = 10V VDSS 30V ID 12A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 12 9.6 96 2.5 0.02 20 1.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. --- --- Max. 20 50 Units C/W Notes through are on page 8 www.irf.com 1 3/19/02 IRF7413 Static @ TJ = 25C (unless otherwise specified) Symbol V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- --- 1.0 --- --- --- --- Typ. --- 0.03 --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 11 VGS = 10V, ID = 7.2A m 18 VGS = 4.5V, I D = 6.0A --- V VDS = VGS, ID = 250A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 16 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 44 7.9 9.2 8.8 8.0 35 14 1670 670 100 2290 680 1020 Max. Units Conditions --- S VDS = 10V, ID = 7.2A 66 ID = 7.2A --- nC VDS = 24V --- VGS = 10V, --- VDD = 100V --- ID = 7.2A ns --- RG = 6.2 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 24V, = 1.0MHz --- VGS = 0V, VDS = 0V to 24V Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 120 7.2 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 50 74 3.1 A 96 1.0 75 110 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 7.2A, VGS = 0V TJ = 25C, IF = 7.2A di/dt = 100A/s D S 2 www.irf.com IRF7413 100 VGS TOP 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 100 ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 10 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 1 1 2.5V 0.1 2.5V 20s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 20s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 T J = 150C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 12A ID, Drain-to-Source Current (A) 1.5 1.0 1 T J = 25C 0.5 0 2.0 3.0 VDS = 15V 20s PULSE WIDTH 4.0 5.0 6.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7413 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss = Cgd = C + Cgd ds 12 ID= 7.2A VGS , Gate-to-Source Voltage (V) 10 8 6 4 2 0 10000 VDS= 24V VDS= 15V VDS= 6.0V C, Capacitance (pF) 1000 Ciss Coss Crss 100 10 1 10 100 0 10 20 30 40 50 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100.0 T J = 150C 10.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 1.0 10 Tc = 25C Tj = 150C Single Pulse 1 0 1 10 100sec 1msec 10msec 100 1000 T J = 25C 0.1 0.4 0.6 0.8 VGS = 0V 1.0 1.2 VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7413 12 VDS 10 RD VGS RG 10V Pulse Width 1 s Duty Factor 0.1 % ID , Drain Current (A) D.U.T. + 8 -V DD 6 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Ambient Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 10 1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7413 RDS (on) , Drain-to-Source On Resistance ( ) 0.024 RDS(on) , Drain-to -Source On Resistance ( ) 0.06 0.020 0.05 0.04 0.016 VGS = 4.5V 0.012 VGS = 10V 0.008 0.03 ID = 7.2A 0.02 0.01 0.004 0 20 40 60 80 ID , Drain Current (A) 0.00 3.2 3.3 3.4 3.5 3.6 3.7 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50K 12V .2F .3F VGS QGS D.U.T. + V - DS QG QGD 300 VG EAS , Single Pulse Avalanche Energy (mJ) VGS 3mA TOP 250 Charge IG ID BOTTOM ID 3.2A 4.6A 7.2A Current Sampling Resistors 200 Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 150 100 15V V(BR)DSS tp VDS L DRIVER 50 RG 20V D.U.T IAS + V - DD 0 A 25 50 75 100 125 150 I AS tp 0.01 Starting TJ , Junction Temperature ( C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7413 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOTES: 1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD F OR SOLDERING TO A S UBS TRATE. 3X 1.27 [.050] FOOT PRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DAT E CODE (YWW) Y = LAST DIGIT OF T HE YEAR WW = WEEK LOT CODE PART NUMBER INTERNAT IONAL RECTIFIER LOGO YWW XXXX F7101 www.irf.com 7 IRF7413 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 4.4mH R G = 25, IAS = 7.2A. Pulse width 300s; duty cycle 2%. ISD 7.2A, di/dt 120A/s, VDD V(BR)DSS, TJ 150C Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.3/02 8 www.irf.com |
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