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PC1231XNSZ Series
PC1231XNSZ Series
s Features
1. Low input current type (IF=0.5mA) 2. High resistance to noise due to high common mode rejection voltage (CMR:MIN. 10kV/s) 3. Long creepage distance type 4. Standard 4-pin dual-in-line package 5. Isolation voltage (Viso : 5kVrms)
Low Input Current Type Long Creepage Distance Photocoupler
s Outline Dimensions
Anode mark 1.20.3 0.60.2 Internal connection diagram
1 4
(Unit : mm)
1231
2 3
4.580.5
1
4
2 1 2 3 4
3
s Applications
1. Home appliances 2. Programmable controllers
6.5
0.5
2.540.25
Anode Cathode Emitter Collector
s Rank Table
Model No. Rank mark PC12310NSZ A or no mark A PC12311NSZ Ic (mA) 0.25 to 2.0 0.5 to 1.25 Conditions
IF=0.5mA VCE=5V Ta=25C
7.620.3
4.580.5 0.5TYP. 3.50.5
Epoxy resin
s Absolute Maximum Ratings
2.70.5
(Ta=25C) Unit mA mA V mW V V mA mW mW C C kVrms C
: 0 to 13
0.50.1
Parameter Symbol Rating 10 Forward current IF *1 Peak forward current 200 IFM Input Reverse voltage VR 6 Power dissipation P 15 Collector-emitter voltage VCEO 70 Emitter-collector voltage VECO 6 Output IC 50 Collector current PC 150 Collector power dissipation 170 Total power dissipation Ptot Operating temperature -30 to +100 Topr -55 to +125 Tstg Storage temperature *2 Viso Isolation voltage 5 *3 260 Soldering temperature Tsol
*1 Pulse width<=100s, Duty ratio=0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
3.00.5
PC1231XNSZ Series s Electro-optical Characteristics
Parameter Forward voltage Reverse current Terminal capacitance Collector dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Isolation resistance Floating capacitance Rise time Response time Fall time
*1
(Ta=25C) Conditions IF=10mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10A, IF=0 IF=0.5mA, VCE=5V IF=10mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100 MIN. - - - - 70 6 0.25 - 5x1010 - - - 10 TYP. 1.2 - 30 - - - - - 1011 0.6 4 3 - MAX. 1.4 10 250 100 - - 2.0 0.2 - 1.0 18 18 - Unit V A pF nA V V mA V pF s s kV/s
Symbol VF IR Ct ICEO BVCEO BVECO IC VCE (sat) RISO Cf tr tf CMR
Transfer characteristics
Output
Input
Common mode rejection voltage
Ta=25C, RL=470, VCM=1.5kV (peak), IF=0mA, VCC=9V, Vnp=100mV
*1 Refer to Fig. 1
Fig.1 Test Circuit for Common Mode Rejection Voltage
(dV/dt)
VCM RL Vnp VCC VCM : High wave pulse RL=470 VCC=9V VO 1) Vcp Vnp
VCM
(Vcp Nearly = dV/dtxCfxRL) 1) Vcp : Voltage which is generated by displacement current in floating capacitance between primary and secondary side.
Fig.2 Forward Current vs. Ambient Temperature
Fig.3 Diode Power Dissipation vs. Ambient Temperature
10
Diode power dissipation P (mW)
15
Forward current IF (mA)
10
5
5
0 -30
0
25
50
75
100
125
0 -30
0
25
50
75
100
125
Ambient temperature Ta (C)
Ambient temperature Ta (C)
PC1231XNSZ Series Fig.4 Collector Power Dissipation vs. Ambient Temperature Fig.5 Total Power Dissipation vs. Ambient Temperature
Collector power dissipation PC (mW)
Total power dissipation Ptot (mW)
200
200 170 150
150
100
100
50
50
0 -30
0
25
50
75
100
125
0 -30
0
25
50
75
100
125
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig.6 Peak Forward Current vs. Duty Ratio
2000 Peak forward current IFM (mA) 1000 500 Pulse width <=100s Ta=25C
Fig.7 Forward Current vs. Forward Voltage
100
Forward current IF (mA)
10 Ta=25C Ta=100C 1 Ta=75C Ta=50C Ta=0C Ta=-25C
200 100 50
20 10
5 10
-3
2
5 10
-2
2
5 10
-1
0.1
2 5
1
0
0.5
1.0
1.5
2.0
Duty ratio
Forward voltage VF (V)
Fig.8 Current Transfer Ratio vs. Forward Current
500 VCE=5V Ta=25C Current transfer ratio CTR (%) 400
Fig.9 Collector Current vs. Collector-emitter Voltage
40 Ta=25C PC (MAX.) Collector current IC (mA) 30 IF=7mA 20 IF=5mA IF=3mA 10 IF=2mA IF=1mA IF=0.5mA 6 8 10
300
200
100
0 0.1
0 1 Forward current IF (mA) 10 0 2 4 Collector-emitter voltage VCE (V)
PC1231XNSZ Series Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature
150 VCE=5V IF=0.5mA 100 Collector-emitter saturation voltage VCE (sat) (V)
Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) IF=10mA IC=1mA
Relative current transfer ratio (%)
50
0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C)
Fig.12 Collector Dark Current vs. Ambient Temperature
10-5 10-6 VCE=50V
Fig.13 Response Time vs. Load Resistance
1000 VCE=2V IC=2mA Ta=25C 100 Response time (s) tf td
Collector dark current ICEO (A)
10-7 10-8 10-9 10-10 10-11 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C)
10 tr 1 ts
0.1 0.1
1 Load resistance RL (k)
10
Fig.14 Response Time vs. Load Resistance (Saturation)
1000 VCC=5V IF=16mA Ta=25C 100 Response time (s) ts 10 tf
Fig.15 Test Circuit for Response Time
VCC RD Input RL Output Input Output 10% 90%
td tr td
ts tf
1
tr 0.1 1 10 Load resistance RL (k) 100
PC1231XNSZ Series Fig.16 Voltage gain vs Frequency
5 VCE=2V IC=2mA Ta=25C
Fig.17 Collector-emitter Saturation Voltage vs. Forward Current
Collector-emitter saturation voltage VCE (sat) (V) 5 IC=7mA 4 IC=5mA IC=3mA IC=2mA 3 IC=1mA IC=0.5mA 2 Ta=25C
0 Voltage gain AV (dB) -5 -10 RL=10k
1k 100 -15 -20 -25 0.1
1
0 0 2 4 6 8 10 Forward current IF (mA)
1
10 Frequency f (kHz)
100
1000
Fig.18 Reflow Soldering
Only one time soldering is recommended within the temperature profile shown below. 230C
200C
180C
25C 10s 30s 2min 1min 1min

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