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2SK2898-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V
0,0065 100A 150W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 100 400 20 1268.3 150 150 -55 ~ +150
L=0.169mH,Vcc=24V
Unit V A A V mJ* W C C
- Electrical Characteristics (TC=25C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on)
fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25C VGS=0V Tch=125C VGS=20V VDS=0V ID=50A VGS=4V ID=50A VGS=10V ID=50A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=100A RGS=10 Tch=25C L = 100H IF=100A VGS=0V Tch=25C IF=50A VGS=0V -dI/dt=100A/s Tch=25C
Min. 60 1,0
Typ. 1,5 10 0,2 10 7 5 80 6700 2100 570 20 160 410 330 1,0 85 0,21
Max. 2,0 500 1,0 100 11 6,5 10050 3150 860 30 300 620 500 1,5
40
100
Unit V V A mA nA m m S pF pF pF ns ns ns ns A V ns C
- Thermal Characteristics Item Thermal Resistance
R R
th(ch-c) th(ch-a)
Symbol channel to case channel to ambient
Min.
Typ.
Max. 0,83 35,0
Unit C/W C/W
N-channel MOS-FET
60V 0,0065 100A 150W
2SK2898-01
FAP-IIIB Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=50A; VGS=10V
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80s pulse test; TC=25C
Typical Transfer Characteristics
ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C
ID [A]
1
RDS(ON) [m]
2
ID [A]
3
VDS [V]
Tch [C]
VGS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80s pulse test; TC=25C
Typical Forward Transconductance vs. ID
gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
RDS(ON) [m]
gfs [S]
5
VGS(th) [V]
4
6
ID [A]
ID [A]
Tch [C]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
Typical Gate Charge Characteristic
VGS=f(Qg); ID=45A; TC=25C
Forward Characteristics of Reverse Diode
IF=f(VSD); 80s pulse test; Tch=25C
C [F]
VDS [V]
VGS [V]
IF [A]
7
8
9
VDS [V]
Qg [nC]
VSD [V]
Maximum Avalanche Energy vs. starting Tch
Eas=f(starting Tch): VCC=24V; IAV 45A
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25C
Transient Thermal impedance
EAV [mJ]
10
ID [A]
12
Zth(ch-c) [K/W]
Zthch=f(t) parameter:D=t/T
starting Tch [C]
VDS [V]
t [s]
This specification is subject to change without notice!
N-channel MOS-FET
60V
0,0065 100A 150W
2SK2898-01
FAP-IIIB Series
Typical Switching Characteristics
t=f(ID): VCC = 30V, VGS = 10V, RG = 10
> Characteristics
t [ns]
VSD [V]
Power Dissipation PD=f(TC)
125 100 PD / PDmax [%] 75 50 25 0 0 25 50 75 TC [C] 100 125 150
Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch)
120 100 IAV / IAVmax [%] 80 60 40 20 0 0 25 50 75 starting Tch [C] 100 125 150
This specification is subject to change without notice!

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