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| D TO-247 G S APT8075BN 800V (R) 13.0A 0.75 12.0A 0.90 POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25C unless otherwise specified. APT 8075BN APT 8090BN UNIT Volts Amps 800 13 56 30 310 2.48 800 12 48 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 Volts Watts W/C C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current 2 MIN APT8075BN APT8090BN APT8075BN APT8090BN APT8075BN APT8090BN TYP MAX UNIT Volts 800 800 13 Amps ID(ON) (VDS > ID(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 2 12 0.75 Ohms RDS(ON) 0.90 250 1000 100 2 4 A nA Volts IDSS IGSS V GS(TH) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 1.0mA) THERMAL CHARACTERISTICS Symbol RJC R JA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 050-8007 Rev C 0.40 40 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss C oss Crss Qg Q gs Qgd td (on) tr td (off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8075/8090BN Test Conditions V GS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C R G = 1.8 MIN TYP MAX UNIT 2410 370 120 88 8.9 44 13 18 62 24 2950 520 180 130 13 67 27 36 94 48 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM V SD t rr Characteristic / Test Conditions / Part Number Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage 1 MIN APT8075BN APT8090BN APT8075BN APT8090BN TYP MAX UNIT 13 12 56 48 1.3 656 6.2 1200 12 Volts ns C Amps 2 (VGS = 0V, IS = -ID [Cont.]) Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s) Q rr SAFE OPERATING AREA CHARACTERISTICS Symbol SOA1 SOA2 ILM Characteristic Safe Operating Area Safe Operating Area Inductive Current Clamped Test Conditions / Part Number V DS = 0.4 VDSS , IDS = PD / 0.4 VDSS, t = 1 Sec. IDS = I D [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. APT8075BN APT8090BN MIN TYP MAX UNIT Watts 310 310 56 48 Amps 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 1.0 , THERMAL IMPEDANCE (C/W) 0.5 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 SINGLE PULSE 0.001 10-5 PDM 0.02 0.01 Note: t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 050-8007 Rev C Z JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT8075/8090BN 16 ID, DRAIN CURRENT (AMPERES) V =6V &10V GS 16 ID, DRAIN CURRENT (AMPERES) 5.5V V 12 =10V GS 5.5V 5V 8 4.5V 4 4V 0 2 12 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE 2.5 T = 25C J 2 SEC. PULSE TEST NORMALIZED TO 6V 12 5V 8 4.5V 4 4V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 20 ID, DRAIN CURRENT (AMPERES) T = -55C J V > I (ON) x R (ON)MAX. DS D DS 230 SEC. PULSE TEST 0 T = +25C J V =10V GS 16 2.0 V T = +125C J GS = 10V @ 0.5 I [Cont.] D 12 1.5 V =20V GS 8 1.0 4 T = +125C J T = +25C J 0.5 T = -55C J 0 2 4 6 8 V , GATE-TO-SOURCE VOLTAGE (VOLTS) GS FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 16 ID, DRAIN CURRENT (AMPERES) 0 0.0 0 10 20 30 40 I , DRAIN CURRENT (AMPERES) D FIGURE 5, R (ON) vs DRAIN CURRENT DS BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.2 12 APT8075BN 1.1 1.0 8 APT8090BN 0.9 4 0.8 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 I = 0.5 I [Cont.] D D 0 25 0.7 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 V GS = 10V 2.0 1.2 1.5 1.0 1.0 0.8 0.5 0.6 050-8007 Rev C 0.0 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.4 -50 Page 146 APT8075/8090BN 60 I , DRAIN CURRENT (AMPERES) APT8075BN APT8090BN OPERATION HERE LIMITED BY R (ON) DS 10S 10,000 C C, CAPACITANCE (pF) APT8075BN 100S 1,000 iss 10 APT8090BN 1mS 10mS 1 TC =+25C TJ =+150C SINGLE PULSE 100mS DC C oss C rss 100 D 1 5 10 50 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA , GATE-TO-SOURCE VOLTAGE (VOLTS) 20 I = I [Cont.] D D 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE , REVERSE DRAIN CURRENT (AMPERES) 100 50 10 V 16 V 12 DS DS =80V =160V V DS =400V 20 T = +150C J 10 5 T = +25C J 8 4 2 1 GS 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 0.5 1.0 1.5 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247AD Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC I DR V 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 050-8007 Rev C 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) |
Price & Availability of APT8075
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