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| BCR410W Active Bias Controller Characteristics Supplies stable bias current from 1.8V operating voltage on Low voltage drop: 110mV for 10mA collector currrent 3 4 Type BCR410W Maximum Ratings Parameter Supply voltage Output current Total power dissipation, TS = 110 C Junction temperature Storage temperature 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 1 4 S ense 3 Io u t Application notes Stabilizing bias current of NPN transistors and FET's from 100A to 20mA Ideal supplement for Sieget and other transistors = V re f 1 Vs + - VPS05605 2 GND Marking W8s 1= Vs Pin Configuration 2=GND 3=Iout 4=Sense Package SOT343 Symbol VS Iout Ptot Tj Tstg Value 18 0.5 100 150 -65 ... 150 Unit V mA mW C Thermal Resistance Junction - soldering point 1) RthJS 470 K/W 1 Dec-21-2001 BCR410W Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Additional current consumption VS = 3 V I0 200 400 A Symbol min. Values typ. max. Unit DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage Voltage drop IC = 10 mA hFE VSmin Vdrop IC /IC IC /IC IC /IC - 1.8 110 tbd 2 0.15 - V mV hFE / 2 Change of IC versus TA Change of IC versus VS VS = 3 V %/V %/K Dec-21-2001 Change of IC versus hFE hFE = 50 BCR410W Collector Current IC = f (VS) of stabilized NPN Transistor Parameter Rext. () 10 2 Voltage drop Vdrop = f (IC ) 300 mV mA 240 15 Ohm 22 Ohm 47 Ohm 100 Ohm Vdrop 5.5 10 1 Ic 10 Ohm 220 200 180 160 140 10 0 120 100 80 220 Ohm 470 Ohm 1000 Ohm 60 40 20 10 -1 2.0 2.5 3.0 3.5 4.0 4.5 V Vs 0 -1 10 10 0 10 1 mA 10 2 IC Collector current IC = f (Rext. ) of stabilized NPN Transistor 10 2 Total power dissipation Ptot = f (TS ) 120 mA mW Ic Ptot 2 3 10 1 80 60 10 0 40 20 10 -1 1 10 10 10 Ohm 10 4 Rext 0 0 20 40 60 80 100 120 C 150 TS 3 Dec-21-2001 BCR410W Application Circuit: Vs BCR 410W R ext = + V re f Lc Rb R Fout R F in R F T r a n s is to r 4 Dec-21-2001 |
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