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| NTE56019 and NTE56020 TRIAC, 25 Amp Description: The NTE56019 and NTE56020 are 25 Amp TRIACs with a repetitive peak blocking of 200V and 400V respectively. These devices may be gate triggered from a blocking to conduction state for either polarity of applied voltage and are designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls, and static switching relays. The triggering signal is normally applied between the Gate and MT1. Features: D Electrically Isolated TO220 Type Package D Glass-Passivated Junctions D Surge Capability: Up to 400A Absolute Maximum Ratings: (TA = +25C, 60Hz, with a resistive load unless otherwise specified) Repetitive Peak Blocking Voltage (Note 1), VDRM NTE56019 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE56020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V RMS On-State Current (Conduction Angle of 360, TC = -40 to +125C), IT(RMS) . . . . . . . . . . 25A Non-Repetitive On-State Current (One Cycle), ITSM 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250A 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208A Fusing Current (t = 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259A2s Peak Gate Current (Pulse Width 10s Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Dissipation (Pulse Width 10s, IGT IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Gate Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5K/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Lead Temperature (During Soldering, 1/16" from case, 10sec max), TL . . . . . . . . . . . . . . . . . +230C Note 1. For either polarity of MT2 with reference to MT1 terminal. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Off-State Leakage Current Symbol IDRM VTM Test Conditions VD = VDRM, TJ = +25C, Note 1 VD = VDRM, TJ = +125C, Note 1 On-State Voltage IT(RMS) = 25A, Note 1 Min - - - Typ - - - Max 0.1 3 1.8 Unit mA mA V Note 1. For either polarity of MT2 with reference to MT1 terminal. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Gate Trigger Current Gate Trigger Voltage Holding Current Gate Controlled Turn-On Time Critical Rate-of-Rise Critical Rate-of-Rise, Off-State Symbol IGT VGT IH tgt dv/dt dv/dtc Test Conditions VD = 12V, TC = -40 to +125C VD = 12V, Quadrants I, II, and III, Note 2 Gate Open, Note 1, Note 3 IGT = 500mA, 0.1s Rise Time VD = VDRM, Gate Open, TC = +125C, Note 1 VD = VDRM, IT = 25A, di/dt = 13.5A/ms, Gate Unenergized, Note 1 Min - - - - 250 5 Typ - - - 4 - - Max 80 2.5 100 - - - Unit mA V mA s V/s V/s Note 1. For either polarity of MT2 with reference to MT1 terminal. Note 2. For either polarity of gate voltage with reference to electrode MT1. Note 3. Initial On-State Current = 400mA (DC). .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max Isolated .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT1 .100 (2.54) Gate MT2 |
Price & Availability of NTE56019
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