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| Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION Glass passivated epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery times, soft recovery characteristic and guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYW29EX series QUICK REFERENCE DATA SYMBOL VRRM VF IF(AV) trr IRRM PARAMETER BYW29EXRepetitive peak reverse voltage Forward voltage Forward current Reverse recovery time Repetitive peak reverse current MAX. 150 150 0.895 8 25 0.2 MAX. 200 200 0.895 8 25 0.2 UNIT V V A ns A PINNING - SOD113 PIN 1 2 DESCRIPTION cathode anode PIN CONFIGURATION case SYMBOL k 1 a 2 case isolated 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current1 square wave; = 0.5; Ths 106 C sinusoidal; a = 1.57; Ths 109 C CONDITIONS MIN. -40 -150 150 150 150 8 7.3 11.3 16 80 88 32 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A A2s A A C C IF(RMS) IFRM IFSM I2t IRRM IRSM Tstg Tj RMS forward current Repetitive peak forward current t = 25 s; = 0.5; Ths 106 C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 s; = 0.001 Non-repetitive peak reverse tp = 100 s current Storage temperature Operating junction temperature 1 Neglecting switching and reverse current losses October 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k BYW29EX series MIN. - MAX. 8 UNIT kV ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from both terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from both terminals f = 1 MHz to external heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.5 7.2 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 8 A; Tj = 150C IF = 8 A IF = 20 A VR = VRWM; Tj = 100 C VR = VRWM MIN. TYP. 0.80 0.92 1.1 0.2 2 MAX. 0.895 1.05 1.3 0.6 10 UNIT V V V mA A DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL Qs trr1 trr2 Vfr PARAMETER Reverse recovery charge Reverse recovery time Reverse recovery time Forward recovery voltage CONDITIONS IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 4 20 15 1 MAX. 11 25 20 UNIT nC ns ns V October 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EX series I dI F dt F 0.5A IF t rr time 0A I rec = 0.25A IR trr2 Q I R I s 10% 100% rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm Fig.4. Definition of trr2 I F 12 10 8 PF / W Vo = 0.791 V Rs = 0.013 ohms BYW29 Ths(max) / C D = 1.0 84 95 0.5 0.2 0.1 106 117 128 139 T t time VF V VF time fr 6 4 I tp D= tp T 2 0 0 2 4 6 IF(AV) / A 8 10 150 12 Fig.2. Definition of Vfr Fig.5. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D. PF / W Vo = 0.791 V Rs = 0.013 Ohms R 8 7 6 BYW29 Ths(max) / C a = 1.57 1.9 2.2 106 111.5 117 122.5 128 133.5 139 144.5 D.U.T. Voltage Pulse Source 5 4 3 4 2.8 Current shunt 2 to 'scope 1 0 0 1 2 3 4 IF(AV) / A 5 6 7 150 8 Fig.3. Circuit schematic for trr2 Fig.6. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). October 1998 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EX series trr / ns 1000 100 Qs / nC 100 IF=10A IF=10A 5A 2A 1A 10 IF=1A 10 1 1.0 1 10 dIF/dt (A/us) 100 1.0 10 -dIF/dt (A/us) 100 Fig.7. Maximum trr at Tj = 25 C. Fig.10. Maximum Qs at Tj = 25 C. 10 Irrm / A 10 Transient thermal impedance, Zth j-hs (K/W) IF=10A 1 IF=1A 1 0.1 0.1 0.01 P D tp D= tp T t 0.01 1 10 -dIF/dt (A/us) 100 0.001 1us T 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYW29F/EX Fig.8. Maximum Irrm at Tj = 25 C. Fig.11. Transient thermal impedance; Zth j-hs = f(tp). 30 IF / A Tj=150 C Tj=25 C BYW29 20 typ 10 max 0 0 0.5 1 VF / V 1.5 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged MECHANICAL DATA Dimensions in mm Net Mass: 2 g 3.2 3.0 10.3 max BYW29EX series 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 1.0 (2x) 0.6 2.54 5.08 0.5 2.5 0.9 0.7 Fig.12. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 5 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYW29EX series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 6 Rev 1.200 |
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