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| BPY 62 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPY 62 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Features q Especially suitable for applications from Bereich von 420 nm bis 1130 nm q Hohe Linearitat q Hermetisch dichte Metallbauform (TO-18) 420 nm to 1130 nm q High linearity q Hermetically sealed metal package (TO-18) mit Basisanschlu, geeignet bis 125 C q Gruppiert lieferbar Anwendungen q Lichtschranken fur Gleich- und with base connection suitable up to 125 C q Available in groups Applications q Photointerrupters q Industrial electronics q For control and drive circuits Wechsellichtbetrieb q Industrieelektronik q "Messen/Steuern/Regeln" Typ Type BPY 62 BPY 62-2 BPY 62-3 BPY 62-4 BPY 62-5 1) 1) Bestellnummer Ordering Code Q60215-Y62 Q60215-Y1111 Q60215-Y1112 Q60215-Y1113 1) Q62702-P1113 Eine Lieferung in dieser Gruppe kann wegen Ausbeuteschwankungen nicht immer sichergestellt werden. Wir behalten uns in diesem Fall die Lieferung einer Ersatzgruppe vor. Supplies out of this group cannot always be guaranteed due to unforseeable spread of yield. In this case we will reserve us the right of delivering a substitute group. Semiconductor Group 238 10.95 fmof6019 BPY 62 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Basisspannung Emitter-base voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 55 ... + 125 260 Einheit Unit C C Top; Tstg TS TS 300 C VCE IC ICS VEB Ptot RthJA 50 100 200 7 200 500 V mA mA V mW K/W Semiconductor Group 239 BPY 62 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 35 V, E = 0 Symbol Symbol S max Wert Value 850 420 ... 1130 Einheit Unit nm nm A LxB LxW H 0.12 0.5 x 0.5 2.4 ... 3.0 mm2 mm x mm mm 8 Grad deg. IPCB IPCB 4.5 17 A A CCE CCB CEB ICEO 8 11 19 5 ( 100) pF pF pF nA Semiconductor Group 240 BPY 62 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Symbol Symbol -2 -3 Wert Value -4 -5 Einheit Unit IPCE IPCE 0.5 ... 1.0 0.8 ... 1.6 1.25 ... 2.5 2.0 mA 3.0 4.6 7.2 11.4 mA tr, tf 5 7 9 12 s Kollektor-Emitter-Sattigungsspannung VCEsat Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 Stromverstarkung Current gain Ee = 0.5 mW/cm2, VCE = 5 V 1) 1) 150 150 160 180 mV IPCE IPCB 170 270 420 670 IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Semiconductor Group 241 BPY 62 Relative spectral sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total power dissipation Ptot = f (TA) Output characteristics IC = f (VCE), IB = Parameter Output characteristics IC = f (VCE), IB = Parameter Dark current ICEO = f (VCE), E = 0 Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Dark current ICEO/ICEO25o = f (TA), VCE = 25 V, E = 0 Collector-emitter capacitance CCE = f (VCE), f = 1 MHz, E = 0 Semiconductor Group 242 BPY 62 Collector-base capacitance CCB = f (VCB), f = 1 MHz, E = 0 Emitter-base capacitance CEB = f (VEB), f = 1 MHz, E = 0 Directional characteristics Srel = f () Semiconductor Group 243 |
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