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| BLV32F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters. FEATURES: * Diffused emitter ballasting resistors * PG = 16 dB at 10 W/224 MHz * OmnigoldTM Metalization System PACKAGE STYLE .500 6L FLG MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG JC O O 4.0 A 60 V 32 V 60 V 4.0 V 82 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.1 C/W O O O O 1= Collector 2= Base 3 and 4= Emitter CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE CC PG IC = 15 mA IE = 10 mA VCE = 32 V VCE = 25 V VCB = 25 V VCE = 25 V TC = 25 C O NONETEST CONDITIONS IC = 100 mA MINIMUM TYPICAL MAXIMUM 32 60 4.0 5.0 UNITS V V V mA --pF dB IC = 1.6 A f = 1.0 MHz POUT = 10 W f = 224 MHz 20 50 16 120 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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