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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
GENERAL DESCRIPTION
Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP. 0.15 15.5 170 MAX. 1200 1200 550 6 10 32 1.0 300 UNIT V V V A A W V ns
Ths 25 C IC = 2 A; IB = 0.4 A IC = 3 A; VCE = 5 V IC = 2.5 A; IB1 = 0.5 A
PINNING - SOT186A
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
123
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1200 550 1200 6 10 3 5 32 150 150 UNIT V V V A A A A W C C
Ths 25 C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.95 UNIT K/W K/W
April 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE hFEsat hFEsat PARAMETER Collector cut-off current
1
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 2.0 A; IB = 0.4 A IC = 2.0 A; IB = 0.4 A IC = 1 mA; VCE = 5 V IC = 500 mA; VCE = 5 V IC = 2 A; VCE = 5 V IC = 3.0 A; VCE = 5 V
MIN. 550 13 20 13 -
TYP. 0.15 0.91 25 30 18.5 15.5
MAX. 1.0 2.0 0.1 1.0 1.5 47 25 -
UNIT mA mA mA V V V
Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified8 SYMBOL PARAMETER Switching times (resistive load) ton ts tf Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICon = 2.5 A; IBon = -IBoff = 0.5 A; RL = 75 ohms; VBB2 = 4 V; TYP. MAX. UNIT s s s s ns s ns
-
0.5 3 0.3
ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 H; -VBB = 5 V ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 H; -VBB = 5 V; Tj = 100 C
170
1.5 300
-
1.8 300
1 Measured with half sine-wave voltage (curve tracer).
April 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
+ 50v 100-200R
IC
90 %
ICsat
90 %
10 %
Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R
IB
ts ton toff IB1 10 % tr 30ns -IB2
tf
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms with resistive load.
IC / mA
VCC
250 200
LC
IBon
100
LB T.U.T.
-VBB
0 VCE / V min VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
VCC
ICsat 90 %
IC
RL VIM 0 tp T
- IB2 10 %
RB T.U.T.
IB IB1 ts
tf
t
t
Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements.
Fig.6. Switching times waveforms with inductive load.
April 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
VBEsat/V
0
20
40
60
80 100 Tmb / C
120
140
0.1
1 IC/A
10
Fig.7. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths)
h FE 100
Fig.10. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.
VCEsat/V 0.5
5V
0.4
0.3
10
0.2
Tj = 25 C
1V
0.1
1 0.01
0.0
0.1 IC / A
1
10
0.1
1 IC/A
10
Fig.8. Typical DC current gain. hFE = f(IC) parameter VCE
Fig.11. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.8
Zth / (K/W)
VCEsat/V 2.0
10 0.5
BU1706AX
1.6 IC=1A 1.2 2A 3A 4A
1
0.2 0.1 0.05 0.02 P D
tp tp
0.1
0.8
D=
T t
0.01
0.4
D=0 0.001
0.10 IB/A 1.00 10.00
T 10u 100u 1m 10m 100m t/s 1
0.0 0.01
1u
10
100
Fig.9. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25C.
Fig.12. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
April 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
IC (A)
11
VCC
10
9
8
7
LC VCL(RBSOAR)
6
5
4
IBon
PROBE POINT LB T.U.T.
3
2
-VBB
1
0 0 200 400 600 800 1,000 1,200 1,400
VCEclamp (V)
Fig.13. Reverse bias safe operating area. Tj Tj max
Fig.14. Test circuit for reverse bias safe operating area. Vcl 1200V; Vcc = 150V; VBB = -5V; LB = 1H;Lc = 200H
April 1999
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3 max 3.2 3.0
4.6 max 2.9 max
Recesses (2x) 2.5 0.8 max. depth
2.8 6.4 seating plane 15.8 max
15.8 max. 3 max. not tinned
19 max.
3 2.5 13.5 min. 1 0.4
M
2
3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7
5.08
Fig.15. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
April 1999
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
April 1999
7
Rev 1.000

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