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| BYV32-50M0 BYV32-100M BYV32-150M BYV32-200M MECHANICAL DATA Dimensions in mm 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0.6 0.8 4.6 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M ax. HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS * STANDARD (COMMON CATHODE) * COMMON ANODE * SERIES CONNECTION 16.5 3.6 Dia. 1 3 .5 1 0 .6 0 .7 6 (0 .0 3 0 ) m in . 1 3 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 123 1 3 .7 0 2 1.0 2 .5 4 BSC 2. 70 BSC 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) FEATURES * HERMETIC TO220 METAL OR CERAMIC SURFACE MOUNT PACKAGE * SCREENING OPTIONS AVAILABLE * ALL LEADS IOLATED FROM CASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT ELECTRICAL CONNECTIONS Common Cathode BYV32-xxxM 1 1 2 2 3 3 3 Common Anode BYV32-xxxAM Series Connection BYV32-xxxRM 1 2 * VOLTAGE RANGE 50 TO 200V * AVERAGE CURRENT 20A * VERY LOW REVERSE RECOVERY TIME - trr = 35ns * VERY LOW SWITCHING LOSSES Applications include secondary rectification in high frequency switching power supplies. 1 = A1 Anode 1 2 = K Cathode 3 = A2 Anode 2 1 = K1 Cathode 1 2 = A Anode 3 = K2 Cathode 2 1 = K1 Cathode 1 2 = Centre Tap 3 = A2 Anode ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VRRM VRWM VR IFRM IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage Continuous Reverse Voltage Repetitive Peak Forward Current Average Forward Current tp = 10ms Tcase = 70C BYV32 -50M 50V 50V 50V BYV32 -100M 100V 100V 100V BYV32 -150M 150V 150V 150V BYV32 -200M 200V 200V 200V 200A 20A (switching operation, d = 0.5, both diodes conducting) IFSM Tstg Tj Surge Non Repetitive Forward Current Storage Temperature Range Maximum Operating Junction Temperature tp = 10 ms 80A -65 to 200C 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 BYV32-50M0 BYV32-100M BYV32-150M BYV32-200M ELECTRICAL CHARACTERISTICS (Per Diode) (Tcase = 25C unless otherwise stated) Parameter IR Reverse Current Test Conditions VR = VRWM VR = VRWM IF = 8A IF = 20A IF = 5A IF = 2A di / dt = 20A/ms IF = 1A di / dt = 50A/ms IF = 2A di / dt = 20A/ms IF = 1A VR = 30V VR = 30V Tj = 25C Tj = 100C TC = 25C TC = 25C TC = 100C VR = 30V Min. Typ. Max. 30 0.6 1.1 1.5 0.95 35 50 15 Unit mA mA V VF * Forward Voltage ns ns nC V trr Reverse Recovery Time Qrr VFP Recovered Charge Forward Recovery Overvoltage di / dt = 10A/ms 1.0 * Pulse Test: tp 300ms, duty cycle 2%. THERMAL CHARACTERISTICS (TO220 METAL CASE) RqJC Thermal Resistance Junction - Case 1.6 C/W Both diodes conducting. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 7/00 |
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