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| VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) N-Channel P-Channel 30 -30 rDS(on) Max (W) 1 @ VGS = 12 V 2 @ VGS = -12 V VGS(th) (V) 0.8 to 2.5 -2 to -4.5 ID (A) 0.85 -0.6 FEATURES D D D D D Low On-Resistance: 0.8/1.6 W Low Threshold: 1.5/-3.1 V Low Input Capacitance: 38/60 pF Fast Switching Speed: 9/16 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Dual-In-Line D1 N S1 G1 NC G2 P S2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 D4 S4 G4 NC G3 S3 D3 N "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code P Device Marking Top View VQ3001J "S" fllxxyy VQ3001P "S" fllxxyy Top View Plastic: VQ3001J Sidebraze: VQ3001P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage VQ3001J Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70221 S-04279--Rev. D, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C VQ3001P TA= 25_C TA= 100_C VGS ID IDM PD RthJA TJ, Tstg Symbol VDS N-Channel 30 "20 "20 0.85 0.52 3 1.3 0.52 96.2 -55 to 150 P-Channel 30 "20 "20 -0.6 -0.37 -2 1.3 0.52 96.2 Total Quad Unit V A 2 0.8 62.5 -55 to 150 W _C/W _C 11-1 VQ3001J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits N-Channel Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage V(BR)DSS VGS = 0 V, ID = 10 mA VGS = 0 V, ID = -10 mA VDS = VGS, ID = 1 mA VGS(th) VDS = VGS, ID = -1 mA VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V, TJ = 125_C VDS = 24 V, VGS = 0 V Zero-Gate Voltage Drain Current VDS = -24 V, VGS = 0 V IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = -24 V, VGS = 0 V, TJ = 125_C On-State Drain Currentb VDS = 10 V, VGS = 12 V ID(on) VDS = -10 V, VGS = -12 V VGS = 5 V, ID = 0.2 A VGS = 12 V, ID = 1 A Drain-Source On-State Resistanceb rDS(on) VGS = -12 V, ID = -1 A VGS = 12 V, ID = 1 A, TJ = 125_C VGS = -12 V, ID = -1 A, TJ = 125_C Forward Transconductanceb VDS = 10 V, ID = 0.5 A gfs VDS = -10 V, ID = -0.5 A 3 -2 1.2 0.81 1.6 1.65 2.7 500 390 250 200 mS 2.0 4.0 1.75 1.0 2.0 W 2 -1.5 A 500 -500 55 -55 1.5 -3.1 "100 "500 10 -10 mA m 0.8 2.5 -2 -4.5 "100 "500 nA 30 -30 V P-Channel Min Max Unit Symbol Test Condition Typa Min Max Dynamic 38 Input Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = -15 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss N-Channel Turn-On Time tON VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V, RG = 25 W P-Channel Turn-Off Time tOFF VDD = -15 V, RL = 23 W ID ^ -0.6 A, VGEN = -10 V, RG = 25 W 60 33 45 8 15 9 19 14 16 30 30 30 30 ns 35 60 110 100 pF 110 150 Output Capacitance Coss Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. VNDQ03/VPEA03 www.vishay.com 11-2 Document Number: 70221 S-04279--Rev. D, 16-Jul-01 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 2.0 VGS = 10 V 1.6 ID - Drain Current (mA) ID - Drain Current (A) 160 2.7 V 120 2.5 V 80 2.3 V 40 7V 200 6V 10 V 2.9 V N-CHANNEL Output Characteristics for Low Gate Drive 1.2 5V 0.8 4V 0.4 3V 2V 2.1 V 1.7 V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics 500 VDS = 15 V rDS(on) - On-Resistance ( ) 400 ID - Drain Current (mA) 3 On-Resistance vs. Gate-to-Source Voltage ID = 0.2 A 300 0.5 A 2 1.0 A 1 200 TJ = 125_C 100 25_C -55_C 0 0 1 2 3 4 5 0 0 4 8 12 16 20 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 2.5 rDS(on) - Drain-Source On-Resistance ( ) rDS(on) - Drain-Source On-Resistance ( ) (Normalized) 2.25 2.00 1.75 1.50 Normalized On-Resistance vs. Junction Temperature VGS = 10 V 2.0 VGS = 4.5 V 1.5 6V ID = 0.5 A 0.1 A 1.0 1.25 1.00 0.75 0.50 10 V 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -10 30 70 110 150 ID - Drain Current (A) TJ - Junction Temperature (_C) Document Number: 70221 S-04279--Rev. D, 16-Jul-01 www.vishay.com 11-3 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 VDS = 10 V TJ = 150_C ID - Drain Current (mA) 1 100_C 25_C 0.1 C - Capacitance (pF) 100 VGS = 0 V f = 1 MHz 120 N-CHANNEL Capacitance 80 60 40 Ciss Coss 20 -55_C 0.01 0.6 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Crss Gate Charge 6 ID = 1 A VGS - Gate-to-Source Voltage (V) 5 t - Switching Time (ns) 100 Load Condition Effects on Switching VDD = 25 V RG = 25 W VGS = 0 to 10 V 4 VDS = 15 V 3 24 V 2 10 td(on) tr td(off) tf 1 0 0 80 160 240 320 400 Qg - Total Gate Charge (pC) 1 0.1 1 ID - Drain Current (A) 10 Drive Resistance Effects on Switching 100 VDD = 25 V RL = 24 W VGS = 0 to 10 V ID = 1 A t - Switching Time (ns) 500 Transconductance TJ = -55_C 25_C gfs - Forward Transconductance (S) 400 150_C 300 10 td(on) tf tr td(off) 200 VDS = 7.5 V 300 ms, 1% Duty Cycle Pulse Test 100 1 10 50 RG - Gate Resistance (W) 100 0 0 100 200 300 400 500 ID - Drain Current (mA) www.vishay.com 11-4 Document Number: 70221 S-04279--Rev. D, 16-Jul-01 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics -2.0 VGS = -10 V -1.6 ID - Drain Current (A) -9 V -1000 125_C -8 V ID - Drain Current (mA) -800 TJ = -55_C 25_C P-CHANNEL Transfer Characteristics -1.2 -7 V -600 -0.8 -6 V -400 -0.4 -5 V -4 V -200 0 0 -1 -2 -3 -4 VDS - Drain-to-Source Voltage (V) Capacitance 175 150 125 100 75 50 25 0 0 -5 -10 -15 -20 -25 -30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature 1.65 Crss Coss VGS = 0 V f = 1 MHz VGS - Gate-to-Source Voltage (V) -5 0 0 -2 -4 -6 -8 VGS - Gate-to-Source Voltage (V) Gate Charge -18 -10 -15 VDS = -15 V ID = -1 A VDS = -24 V ID = -1 A C - Capacitance (pF) -12 -9 Ciss -6 -3 0 0 1000 2000 3000 4000 5000 Qg - Total Gate Charge (pC) Source-Drain Diode Forward Voltage -10 K TJ = 150_C -1 K IS - Source Current (mA) TJ = 25_C 1.50 rDS(on) - On-Resistance ( ) (Normalized) 1.35 VGS = -4.5 V ID = -0.5 A VGS = -10 V ID = -0.1 A 1.20 -100 1.05 -10 0.90 0.75 -50 -1 -25 0 25 50 75 100 125 150 0 TJ - Junction Temperature (_C) -1.0 -2.0 -3.0 VSD - Source-to-Drain Voltage (V) -4.0 Document Number: 70221 S-04279--Rev. D, 16-Jul-01 www.vishay.com 11-5 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) P-CHANNEL On-Resistance vs. Gate-to-Source Voltage 3.0 ID = -0.5 A rDS(on) - On-Resistance ( ) 2.5 ID - Drain Current (A) -1 K -10 K Threshold Region VDS = -10 V TJ = 150_C 2.0 100_C -100 25_C 1.5 -0.2 A -10 -55_C 1.0 0 0 -4 -8 -12 -16 -20 VGS - Gate-to-Source Voltage (V) -1 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 VGS - Gate-Source Voltage (V) www.vishay.com 11-6 Document Number: 70221 S-04279--Rev. D, 16-Jul-01 |
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