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RGP15M PQ05RH1 Q6270 44764 00002 125L6BBI P15N05 10700
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  Datasheet File OCR Text:
 SHINDENGEN
Varistor
SMD
VRYA6
OUTLINE DIMENSIONS
Case : 1Y (Unit : mm)
RATINGS
Absolute Maximum Ratings Item
Storage Temperature Junction Temperature
Symbol Tstg Tj
Conditions
Ta = 40, Sine wave, R-load, Commercial frequency, On alumina substrate, 1 element operation Ta = 40, Sine wave, R-load, Commercial frequency, On alumina substrate, 2 elements operation Ta = 40, Sine wave, R-load, Commercial frequency, On glass-epoxy substrate, 1 element operation Ta = 40, Sine wave, R-load, Commercial frequency, On glass-epoxy substrate, 2 elements operation 50Hz, Sine wave, Non-repetitive, 2 elements series operation 10/200s, Non-repetitive, 2 elements series operation 10/1000s, Non-repetitive, 2 elements series operation
Ratings -30125 125 310 200
Unit
IO
Average Rectified Forward Current
mArms 200 130 8 65 30 Arms A A
Peak Surge Forward Current
IFSM
Electrical Characteristics (Tl=25) Item Symbol
IF = 1mA, 1 element IF = 1mA, 2 elements series Forward Voltage
Conditions
VF
Junction Capacitance
Cj
IF = 10mA, 1 element IF = 10mA, 2 elements series IF = 70mA, 1 element IF = 70mA, 2 elements series f = 100kHz, VD = 0V, OSC = 50mV Junction to ambient, On alumina substrate, 1 element operation
Ratings Unit 2.052.55 4.105.10 2.503.00 V 5.006.00 2.853.35 5.706.60 TYP 13 pF MAX 90 MAX 150 /W MAX 150 MAX 250
Thermal Resistance
ja Junction to ambient, On alumina substrate, 2 elements operation
Junction to ambient, On glass-epoxy substrate, 1 element operation Junction to ambient, On glass-epoxy substrate, 2 elements operation
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
VRYA6
1000 per element
Forward Voltage
100
Forward Current IF [mA]
Tl=125C [TYP]
Tl=25C [TYP]
10
1
Pulse measurement
0.1
0
1
2
3
4
5
6
Forward Voltage VF [V]
VRYA6
1.8 Tj=125C per element Sine Wave
Forward Power Dissipation
1.6
1.4
1.2
Power Dissipation P [W]
1
0.8
0.6
0.4
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Average Rectified Forward Current IO (rms) [A]
VRYA6
Average Rectified Forward Current IO (rms) [A]
0.35
Derating Curve
0.3
Alumina substrate Soldering land 1mm Conductor layer 20m 25 x 25 x 0.64mm
0.25
0.2 1-element operation 0.15
0.1 2-element series operation 0.05 Sine Wave R-load Free in air 0 20 40 60 80 100 120 140 160
0
Ambient Temperature Ta [C]
VRYA6
Average Rectified Forward Current IO (rms) [A]
0.28 Sine Wave R-load Free in air
Derating Curve
0.24
Glass-epoxy substrate Soldering land 1mm Conductor layer 35m 25 x 25 x 1.5mm
0.2
0.16
0.12 1-element operation 0.08
0.04 2-element series operation 0 0 20 40 60 80 100 120 140 160
Ambient Temperature Ta [C]
VRYA6
9
Peak Surge Forward Capability
IFSM
8
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM (rms) [A]
7
2-element series operation, per element non-repetitive, sine wave, Tj=25C before surge current is applied
6
5
4
3
2
1
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
VRYA6
Junction Capacitance
TYP per element Tl = 25C
25
20
15
Junction Capacitance Cj [pF]
10
5
0 10 100
1000
10000
Frequency f [kHz]


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