![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Previous Datasheet Index Next Data Sheet Bulletin I2117 25TTS..S SERIES SURFACE MOUNTABLE PHASE CONTROL SCR Description/Features The 25TTS..S new series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. VT ITSM < 1.25V @ 16A = 250A VR/ VD = 1200V Output Current in Typical Applications Applications NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz (140m) copper Aluminum IMS, RthCA = 15C/W Aluminum IMS with heatsink, RthCA = 5C/W TA = 55C, T J = 125C, footprint 300mm2 Single-phase Bridge 3.5 8.5 16.5 Three-phase Bridge Units 5.5 13.5 25.0 A Major Ratings and Characteristics Characteristics IT(AV) Sinusoidal waveform IRMS V RRM/ V DRM ITSM VT dv/dt di/dt TJ @ 16 A, TJ = 25C 25 800 and 1200 250 1.25 500 150 - 40 to 125 A V A V V/s A/s C 25TTS..S 16 Units A D2 PAK (SMD-220) 1 To Order Previous Datasheet Index Next Data Sheet 25TTS.. S Series Voltage Ratings VRRM, maximum Part Number peak reverse voltage V 800 1200 VDRM , maximum peak direct voltage V 800 1200 IRRM/IDRM 125C mA 5 25TTS08S 25TTS12S Absolute Maximum Ratings Parameters IT(AV) Max. Average On-state Current IRMS Max. RMS On-state Current ITSM Max. Peak One Cycle Non-Repetitive Surge Current I2t Max. I 2t for fusing 25TTS..S 16 25 210 250 220 310 Units A Conditions 50% duty cycle @ TC = 94 C, sinusoidal wave form 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied A2s 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied A2s V m V mA TJ = 25 C TJ = 125 C mA mA V/s A/s VR = rated V RRM/ VDRM t = 0.1 to 10ms, no voltage reapplied @ 16A, TJ = 25C TJ = 125C I2t VTM rt Max. I 2t for fusing Max. On-state Voltage Drop On-state slope resistance 3100 1.25 12.0 1.0 0.5 5.0 100 200 500 150 VT(TO) Threshold Voltage IRM/I DM Max.Reverse and Direct Leakage Current IH IL Max. Holding Current Max. Latching Current Anode Supply = 6V, Resistive load, Initial IT=1A Anode Supply = 6V, Resistive load dv/dt Max. rate of rise of off-state Voltage di/dt Max. rate of rise of turned-on Current 2 To Order Previous Datasheet Index Next Data Sheet 25TTS.. S Series Triggering Parameters PGM Max. peak Gate Power PG(AV) Max. average Gate Power + IGM Max. paek positive Gate Current - VGM Max. paek negative Gate Voltage IGT Max. required DC Gate Current to trigger 25TTS..S 8.0 2.0 1.5 10 60 45 20 Units W Conditions A V mA Anode supply = 6V, resistive load, TJ = - 10C Anode supply = 6V, resistive load, T J = 25C Anode supply = 6V, resistive load, TJ = 125C V Anode supply = 6V, resistive load, TJ = - 10C Anode supply = 6V, resistive load, T J = 25C Anode supply = 6V, resistive load, TJ = 125C T J = 125C, VDRM = rated value mA T J = 125C, VDRM = rated value VGT Max. required DC Gate Voltage to trigger 2.5 2.0 1.0 VGD IGD Max. DC Gate Voltage not to trigger Max. DC Gate Current not to trigger 0.25 2.0 Switching Parameters tgt t rr tq Typical turn-on time Typical reverse recovery time Typical turn-off time 25TTS..S 0.9 4 110 Units s TJ = 25C TJ = 125C Conditions Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range Soldering Temperature RthJC Max. Thermal Resistance Junction to Case RthJA Typ. Thermal Resistance Junction to Ambient (PCB Mount)** wt T Approximate Weight Case Style 2 (0.07) 2 25TTS..S - 40 to 125 - 40 to 125 240 1.1 40 Units C C C C/W C/W g (oz.) Conditions for 10 seconds (1.6mm from case) DC operation D Pak (SMD-220) **When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140m) copper 40C/W For recommended footprint and soldering techniques refer to application note #AN-994 3 To Order Previous Datasheet Index Next Data Sheet 25TTS.. S Series Maximum Allowable Case Temperature (C) 125 120 115 C on d uction An g le Maximum Allowable Case Temperature (C) 25TTS.. Series R t hJ C (DC) = 1.1 K/W 125 120 115 110 105 100 95 90 85 0 5 30 60 25TTS.. Series R thJC(DC) = 1.1 K/W 110 105 30 100 95 90 60 90 120 0 2 4 6 8 10 12 180 16 18 Conduction Period 90 120 10 15 180 20 DC 25 30 14 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Rating Characteristics Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 30 25 20 15 10 5 0 35 30 25 20 Fig. 2 - Current Rating Characteristics 180 120 90 60 30 DC 180 120 90 60 30 RMS Limit Conduction Angle 15 RMS Limit 10 5 0 Conduction Period 25TTS.. T = 125C J 25TTS.. T = 125C J 0 5 10 15 20 0 5 10 15 20 25 30 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 230 210 190 170 150 130 110 90 25TTS..Series Peak Half Sine Wave Forward Current (A) At Any Rated Load Condition And With Rated V Applied Following Surge. RRM Fig. 4 - On-state Power Loss Characteristics 270 250 230 210 190 170 150 130 110 90 70 0.01 25TTS.. Series 0.1 1 10 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T = 125C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Initial T = 125C J No Voltage Reapplied Rated V Reapplied RRM 1 10 100 Number Of Eq ua l Amplitude Ha lf Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current 4 To Order Previous Datasheet Index Next Data Sheet 25TTS.. S Series 1000 Instantaneous On-state Current (A) 100 10 T = 25C T J= 125C 25TTS.. Series J 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics 100 Instan taneous Gate Voltage (V) Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms tr = 1 s, tp >= 6 s (1) (2) (3) (4) (a) PGM = 40 , tp = 1 ms PGM = 20 W, tp = 2 ms PGM = 8 W, tp = 5 ms PGM = 4 W, tp = 10 ms 10 (b) TJ = -10 C TJ = 25 C T J = 1 25 C 1 VGD IGD 0.1 0.001 0.01 (4) (3) (2) (1) 25TTS.. 0.1 1 Frequency Limited by PG(AV) 10 10 0 Instantaneous Gate Curren t (A) Fig. 8 - Gate Characteristics Transient Thermal Impedance Z thJC (K/W) 10 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Steady State Value (DC Operation) 1 0.1 Single Pulse 25TTS.. Series 0.01 0.0001 0.001 0.01 Square Wave Pulse Duration (s) 0.1 1 Fig. 9 - Thermal Impedance ZthJC Characteristics 5 To Order Previous Datasheet Index Next Data Sheet 25TTS.. S Series Marking Information EXAMPLE: THIS IS AN 25TTS12S INTERNATIONAL RECTIFIER LOGO (A) PART NUMBER 25TTS12S 9G3A ASSEMBLY LOT CODE 9512 DATE CODE (YYWW) YY = YEAR WW = WEEK (K) (G) Tape & Reel Information TRR 1.60 (0. 063) 1.50 (0. 059) 4.10 ( 0.161) 3.90 ( 0.153) FEED DIR ECTION 1.60 (0.063) 1.50 (0.059) DIA. 0.368 (0.0145) 0.342 (0.0135) 1.85 (0.073) 1.65 (0.065) 11 .60 (0.457) 11 .40 (0.449) 15 .42 (0.609) 15 .22 (0.601) 1.75 (0.069) 24.30 (0 .95 7) 23.90 (0 .94 1) TRL DIA. 10 .90 (0.429) 10 .70 (0.421) 1.25 (0.049) 16 .10 (0.634) 15 .90 (0.626) 4.72 (0.186) 4.52 (0.178) FEED DIRECTION Dimensions in millimeters and inches 13.50 ( 0.5 32) 12.80 ( 0.5 04) DIA. 26 .40 (1.039) 24 .40 (0.961) 360 (14.173) DIA. M AX. 60 (2.362) D IA . M IN. SMD-220 Tape & Reel When ordering, indic ate th e part number, part orie ntation, and the quantity. Qu antitie s are in multiples of 800 pieces p er reel fo r both TRL and T RR. 6 To Order Previous Datasheet Index Next Data Sheet 25TTS.. S Series Outline Table 10.16 (0.40) REF. 4.69 (0.18) 4.20 (0.16) 1.32 (0.05) 6.47 (0.25) 15.49 (0.61) 1.22 (0.05) 93 6.18 (0.24) 14.73 (0.58) 2.61 (0.10) 2.32 (0.09) 8.89 (0.35) 5.28 (0.21) 4.78 (0.19) 3X 1.40 (0.055) REF. 0.93 (0.37) 0.69 (0.27) 0.55 (0.02) 0.46 (0.02) 1.14 (0.045) 2X MINIMUM RECOMMENDED F OOTPRIN T 11.43 (0.45) (K) 1 (G) 3 4.57 (0.18) 8.89 (0.35) 1 (K) Cathode 2 (A) Anode 3 (G) Gate 4.32 (0.17) 2 17.78 (0.70) 0.61 (0.02) MAX. 5.08 (0.20) REF. (A) 3.81 (0.15) 2.08 (0.08) Dimensions in millimeters and inches 2X 2.54 (0.10) 2X Ordering Information Table Device Code 25 1 1 2 3 4 5 6 7 - T 2 T 3 S 4 12 5 S 6 TRL 2 (A) Current Rating, RMS value Circuit Configuration T = Single Thyristor Package T = TO-220AC Type of Silicon S = Converter Grade Voltage code: Code x 100 = VRRM S = TO-220 D2Pak (SMD 220) Version Tape and Reel Option TRL = Left Reel TRR = Right Orientation Reel 08 = 800V 12 = 1200V 1 (K) (G) 3 7 To Order |
Price & Availability of 25TTS08S
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |