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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 6.0 0.12 MAX. 1500 800 10 25 125 5.0 0.25 UNIT V V A A W V A s Tmb 25 C IC = 6.0 A; IB = 1.2 A f = 64 kHz ICsat = 6.0 A; f = 64 kHz PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 10 25 6 9 150 6 125 150 150 UNIT V V A A A A mA A W C C average over any 20 ms period Tmb 25 C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS with heatsink compound in free air TYP. 45 MAX. 1.0 UNIT K/W K/W 1 Turn-off current. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.2 A IC = 6.0 A; IB = 1.2 A IC = 1 A; VCE = 5 V IC = 6 A; VCE = 5 V MIN. 7.5 800 5 TYP. 13.5 10 7 MAX. 0.25 2.0 0.25 5.0 1.3 8 UNIT mA mA mA V V V V Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (64 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 6.0 A; LC = 170 H; Cfb = 5.4 nF; IB(end) = 0.7 A;LB = 0.6 H;-VBB = 2 V; (-dIB/dt = 3.33A/s) TYP. 115 MAX. UNIT pF 1.7 0.12 2.0 0.25 s s IC / mA + 50v 100-200R 250 Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R 200 100 0 VCE / V min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW TRANSISTOR IC DIODE ICsat VCC t LC IB I B end t 5 us 6.5 us 16 us IBend LB T.U.T. CFB VCL -VBB VCE t Fig.3. Switching times waveforms (64 kHz). Fig.6. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V; LC = 100 - 400 H; VCL 1500 V; LB = 3 H; CFB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A h FE Tj = 85 C Tj = 25 C Tj = -40 C ICsat 90 % IC 100 BU2522A 10 % tf ts IB IBend 10 t t 1 0.01 - IBM 0.1 1 IC / A 10 100 Fig.4. Switching times definitions. Fig.7. Typical DC current gain. hFE = f (IC) VCE = 5 V + 150 v nominal adjust for ICsat 1.2 1.1 1 VBESAT / V Tj = 85 C Tj = 25 C BU2522A Lc 0.9 0.8 0.7 IC/IB = 3 5 IBend LB T.U.T. Cfb 0.6 0.5 -VBB 0.4 0.1 1 IC / A 10 Fig.5. Switching times test circuit. Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB September 1997 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW 10 VCESAT / V Tj = 85 C Tj = 25 C BU2522A 4 3.5 3 ts, tf / us BU2522AF 1 IC/IB = 5 0.1 3 2.5 2 1.5 1 5A 0.5 IC = 6A 0.01 0.1 1 IC / A 10 100 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IB / A 2 Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 64 kHz PD% Normalised Power Derating 1.2 1.1 1 0.9 0.8 0.7 0.6 VBESAT / V Tj = 85 C Tj = 25 C BU2522A 120 110 100 90 80 70 60 50 IC = 7A 6A 5A 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IB / A 2 40 30 20 10 0 0 20 40 60 80 100 Tmb / C 120 140 Fig.10. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC BU2522AF Fig.13. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb) Zth / (K/W) 100 Poff / W 10 IC = 6A 10 5A 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 D=0 0.001 1E-06 P D tp D= tp T t T 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IB / A 2 1E-04 1E-02 t/s 1E+00 Fig.11. Typical turn-off losses. Tj = 85C Poff = f (IB); parameter IC; f = 64 kHz Fig.14. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T September 1997 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW IC / A 100 BU2520A 30 IC / A BU2522AF tp = ICM = 0.01 30 us 20 ICDC 10 10 100 us 0 Ptot 1 1 ms 0 500 VCE / V 1000 1500 Fig.16. Reverse bias safe operating area. Tj Tjmax 0.1 10 ms DC 0.01 1 10 100 1000 VCE / V Fig.15. Forward bias safe operating area. Tmb = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. September 1997 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW MECHANICAL DATA Dimensions in mm Net Mass: 5 g 5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max 2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M 15.5 min Fig.17. SOT429; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.100 |
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