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| FDD3706/FDU3706 April 2002 FDD3706/FDU3706 20V N-Channel PowerTrench(R) MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Features * 50 A, 20 V RDS(ON) = 9 m @ VGS = 10 V RDS(ON) = 11 m @ VGS = 4.5 V RDS(ON) = 16 m @ VGS = 2.5 V * Low gate charge (16 nC) * Fast Switching * High performance trench technology for extremely low RDS(ON) Applications * DC/DC converter * Motor Drives D G D-PAK TO-252 (TO-252) I-PAK (TO-251AA) GDS G S o Absolute Maximum Ratings Symbol VDSS VGSS ID TA=25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25C @TA=25C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 20 12 50 14.7 60 44 3.8 1.6 -55 to +175 Units V V A PD Power Dissipation @TC=25C @TA=25C @TA=25C W TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 3.4 45 96 C/W C/W C/W Package Marking and Ordering Information Device Marking FDD3706 FDU3706 Device FDD3706 FDU3706 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13'' Tube Tape width 12mm N/A Quantity 2500 units 75 (c)2002 Fairchild Semiconductor Corp. FDD3706/FDU3706 Rev C (W) FDD3706/FDU3706 Electrical Characteristics Symbol EAS IAS TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 10V, ID=7A Min Typ Max Units 60 7 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 A 20 13 1 100 -100 V mV/C A nA nA ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = -12 V VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS = 10 V, ID = 16.2 A VGS = 4.5 V, ID = 14.7 A VGS = 2.5 V, ID = 12.2 A VGS = 4.5 V, ID = 14.7 A,TJ = 125C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 14.7 A 0.5 1 -3.5 7.5 8 11 12.6 1.5 V mV/C m 9 11 16 19 ID(on) gFS On-State Drain Current Forward Transconductance 30 65 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V, 1882 430 201 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 11 VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 15 35 16 16 VDS = 10V, VGS = 4.5 V ID = 14.7 A, 3.7 4 20 27 56 29 23 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 2) 3.2 0.7 1.2 A V a) RJA = 40C/W when mounted on a 2 1in pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD R DS(ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD3706/FDU3706 Rev C (W) FDD3706/FDU3706 Typical Characteristics 100 VGS=4.5V 80 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V 1.8 ID, DRAIN CURRENT (A) 1.6 VGS = 2.5V 1.4 2.5V 60 40 2.0V 20 1.2 3.0V 3.5V 4.0V 4.5V 1 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 20 40 60 80 100 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.03 RDS(ON), ON-RESISTANCE (OHM) I D = 7.4A 0.025 1.6 R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 14.7A VGS = 4.5V 1.4 1.2 0.02 TA = 125 oC 0.015 1 TA = 25oC 0.8 0.01 0.6 -50 -25 0 25 50 75 100 o 0.005 125 150 175 1 2 3 4 5 TJ , JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 I D, DRAIN CURRENT (A) TA =-55o C 125oC 25oC VGS = 0V 10 TA = 125o C 40 1 25 C o 30 20 0.1 0.01 0.001 -55 C o 10 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD3706/FDU3706 Rev C (W) FDD3706/FDU3706 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 14.7A 8 15V 6 CAPACITANCE (pF) VDS = 5V 10V 2500 f = 1MHz VGS = 0 V 2000 CISS 1500 4 1000 COSS 500 CRSS 2 0 0 10 20 Qg , GATE CHARGE (nC) 30 40 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 10s VGS = 4.5V SINGLE PULSE o RJA = 96 C/W TA = 25oC DC 100s 80 SINGLE PULSE RJA = 96C/W TA = 25C 60 1 40 0.1 20 0.01 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1 , TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 R JA (t) = r(t) * R JA R JA = 96 C/W P(pk) t1 t2 0.01 0.01 0.001 SINGLE PULSE T J - T A = P * RJA (t) Duty Cycle, D = t1 / t2 0.0001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD3706/FDU3706 Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1 |
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