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| HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 April 1995 10A, 12A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EMITTER COLLECTOR COLLECTOR (FLANGE) GATE Features * 10A and 12A, 400V and 500V * VCE(ON): 2.5V Max. * TFI: 1s, 0.5s * Low On-State Voltage * Fast Switching Speeds * High Input Impedance * No Anti-Parallel Diode Applications HGTP-TYPES JEDEC TO-220AB * Power Supplies * Motor Drives * Protection Circuits COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Description The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N40E1 HGTP10N50C1 HGTP10N50E1 PACKAGE TO-218AC TO-218AC TO-218AC TO-218AC TO-220AB TO-220AB TO-220AB TO-220AB BRAND G12N40C1 G12N40E1 G12N50C1 G12N50E1 G10N40C1 G10N40E1 G10N50C1 G10N50E1 E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 500 500 15 20 12 17.5 75 0.6 -55 to +150 HGTP10N40C1 HGTP10N40E1 400 400 -5 20 10 17.5 60 0.48 -55 to +150 HGTP10N50C1 HGTP10N50E1 UNITS 500 500 -5 20 10 17.5 60 0.48 -55 to +150 V V V V A A W W/oC oC Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . VCGR Reverse Collector-Emitter Voltage . . . . . . . . . . . . VECS(rev.) Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating Above TC > +25oC . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . TJ, TSTG 400 400 15 20 12 17.5 75 0.6 -55 to +150 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 File Number 1697.3 3-15 Specifications HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTH12N40C1, E1, HGTP10N40C1, E1 PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage SYMBOL BVCES VGE(TH) ICES TEST CONDITIONS IC = 1mA, VGE = 0 VGE = VCE, IC = 1mA VCE = 400V, TC = +25oC VCE = 500V, TC = +25oC VCE = 400V, TC = +125oC VCE = 500V, TC = Gate-Emitter Leakage Current Collector-Emitter on Voltage IGES VCE(ON) +125oC MIN 400 MAX HGTH12N50C1, E1, HGTP10N50C1, E1 MIN 500 MAX UNITS V 2.0 4.5 3 (Typ) 250 1000 100 2.5 3.2 6 (Typ) 19 (Typ) 50 50 400 2.0 4.5 3 (Typ) 250 1000 100 2.5 3.2 6 (Typ) 19 (Typ) 50 50 400 V A A A A nA V V V nC ns ns ns Zero Gate Voltage Collector Current - - VGE = 20V, VCE = 0 IC = 10A, VGE = 10V IC = 17.5A, VGE = 20V Gate-Emitter Plateau Voltage On-State Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 40E1, 50E1 40C1, 50C1 Turn-Off Energy Loss per Cycle (Off Switching Dissipation = WOFF x Frequency) 40E1, 50E1 40C1, 50C1 Thermal Resistance Junction-to-Case VGEP QG(ON) tD(ON)I tRI tD(OFF)I tFI IC = 5A, VCE = 10V IC = 5A, VCE = 10V IC = 10A, VCE(CLP) = 300V, L = 50H, TJ = +100oC, VGE = 10V, RG = 50 680 (Typ) 400 WOFF IC = 10A, VCE(CLP) = 300V, L = 50H, TJ = +100oC, VGE = 10V, RG = 50 1000 500 680 (Typ) 400 1000 500 ns ns 680 (Typ) 400 (Typ) RJC HGTH, HGTM HGTP 1.67 2.083 1.67 2.083 J J oC/W oC/W INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 3-16 HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 Typical Performance Curves 20.0 VGE = 10V, RGEN = RGE = 100 RATED POWER DISSIPATION (%) -50 -25 0 +25 +50 +75 +100 +125 +150 +175 17.5 ICE, COLLECTOR CURRENT (A) 15.0 12.5 10.0 7.5 5.0 2.5 0.0 -75 100 80 60 40 20 0 +25 +50 +75 +100 +125 +150 TD , JUNCTION TEMPERATURE (oC) TC , CASE TEMPERATURE (oC) FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50, VGE = 0V ARE THE MIN. ALLOWABLE VALUES FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING CURVE NORMALIZED GATE THRESHOLD VOLTAGE 1.3 1.2 1.1 1.0 0.9 0.8 0.7 r(t), EFFECTIVE TRANSIENT THERMAL IMPEDANCE (NORMALIZED) VGE = VCE, IC = 1mA ZJC(t) = r(t)RJC, D CURVES APPLY FOR POWER PULSE, TRAIN SHOWN READ TIME AT t1, TJ(PEAK) - TC = P(PEAK)ZJC(t) 10 1.0 D = 0.5 D = 0.2 0.1 D = 0.05 SINGLE PULSE 0.1 1.0 10 t, TIME (ms) 100 1000 -50 0 +50 +100 +150 0.01 0.01 TJ , JUNCTION TEMPERATURE (oC) FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 4. NORMALIZED THERMAL RESPONSE CHARACTERISTICS ICE, ON-STATE COLLECTOR CURRENT (A) 17.5 TC = +25oC 17.5 VGE = 20V ICE, COLLECTOR CURRENT (A) 15.0 12.5 10.0 7.5 5.0 2.5 +125oC 0 2.5 5.0 7.5 10.0 0 VGE = 4V VGE = 10V VGE = 8V VGE = 6V VGE = 7V PULSE TEST, VCE = 10V PULSE DURATION = 80s 15.0 DUTY CYCLE = 0.5% MAX. 12.5 10.0 7.5 5.0 +25oC 2.5 -40oC VGE = 5V VGE, GATE-TO-EMITTER VOLTAGE (V) 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5 FIGURE 5. TYPICAL TRANSFER CHARACTERISTICS FIGURE 6. TYPICAL SATURATION CHARACTERISTICS 3-17 HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 Typical Performance Curves (Continued) 17.5 15.0 12.5 10.0 7.5 5.0 2.5 +25 C o 1200 PULSE TEST, VGE = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. C, CAPACITANCE (pF) f = 1MHz ICE, COLLECTOR CURRENT (A) 1000 800 CISS 600 400 200 CRSS 0 COSS 0 0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 10 20 30 40 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 50 FIGURE 7. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE vs COLLECTOR CURRENT FIGURE 8. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE VCE(ON), COLLECTOR-EMITTER ON VOLTAGE (V) 3.00 400 IC = 10A, VGE = 10V, VCL = 300V L = 50H, RG = 50 tD(OFF)I , SWITCHING TIME (ns) +125 +150 2.75 IC = 10A, VGE = 10V 2.50 IC = 10A, VGE = 15V 2.25 300 200 2.00 1.75 IC = 5A, VGE = 10V 100 1.50 +25 IC = 5A, VGE = 15V +50 +75 +100 TJ , JUNCTION TEMPERATURE (oC) 0 +25 +50 +75 +100 +125 TJ , JUNCTION TEMPERATURE (oC) +150 FIGURE 9. TYPICAL VCE(ON) vs TEMPERATURE FIGURE 10. TYPICAL TURN-OFF DELAY TIME EOFF = IC * VCEdt VGE IC tFI , SWITCHING TIME (ns) 800 700 600 40E1/50E1 500 400 40C1/50C1 300 200 100 0 +25 IC = 5A, VGE = 10V, VCL = 300V L = 50H, RG = 50 VCE +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. TYPICAL INDUCTIVE SWITCHING WAVEFORMS FIGURE 12. TYPICAL FALL TIME (IC = 5A) 3-18 HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 Typical Performance Curves (Continued) 800 WOFF , TURN-OFF ENERGY LOSS (J) 700 tFI , SWITCHING TIME (ns) 600 500 400 40C1/50C1 300 200 100 0 +25 40E1/50E1 IC = 10A, VGE = 10V, VCL = 300V L = 50H, RG = 50 1000 900 800 700 600 500 400 300 200 100 0 +25 +50 +75 +100 +125 +150 5A, 40E1/50E1 5A, 40C1/50C1 10A, 40C1/50C1 VGE = 10V, VCL = 300V L = 50H, RG = 50 10A, 40E1/50E1 +50 +75 +100 +125 (oC) +150 TJ, JUNCTION TEMPERATURE TJ , JUNCTION TEMPERATURE (oC) FIGURE 13. TYPICAL FALL TIME (IC = 10A) FIGURE 14. TYPICAL CLAMPED INDUCTIVE TURN-OFF SWITCHING LOSS/CYCLE 500 VCE, COLLECTOR-EMITTER VOLTAGE (V) 10 BVCES VCC = BVCES RL = 50 IG(REF) = 0.38mA VGE = 10V GATEEMITTER VOLTAGE VCC = 0.25 BVCES 8 VGE, GATE-EMITTER VOLTAGE (V) 130V 375 6 250 NOTE: FOR TURN-OFF GATE CURRENTS IN EXCESS OF 3mA. VCE TURN-OFF IS NOT ACCURATELY REPRESENTED BY THIS NORMALIZATION. COLLECTOR-EMITTER VOLTAGE 0 20 IG(REF) IG(ACT) TIME (s) 80 IG(REF) IG(ACT) 0 4 125 2 FIGURE 15. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT Test Circuit RL = 13 L = 50H VCC VCE(CLP) = 300V 20V 0V RGE = 100 1/RG = 1/RGEN + 1/RGE RGEN = 100 FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT 3-19 HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 3-20 3-21 |
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