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| STP12NM50FD-STP12NM50FDFP-STW14NM50FD STB12NM50FD - STB12NM50FD-1 N-CHANNEL500V-0.32-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmeshTM Power MOSFET (with FAST DIODE) TYPE STP12NM50FD STP12NM50FDFP STB12NM50FD STB12NM50FD-1 STW14NM50FD s s s s VDSS 500 V 500 V 500 V 500 V 500 V RDS(on) < < < < < 0.4 0.4 0.4 0.4 0.4 ID 12 12 12 12 14 A A A A A Pw 160 W 35 W 160 W 160 W 175 W 3 3 1 2 2 1 s s TYPICAL RDS(on) = 0.32 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS TO-220 TO-247 TO-220FP 3 I2PAK 3 12 1 D2PAK DESCRIPTION The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDERING INFORMATION SALES TYPE STP12NM50FD STP12NM50FDFP STB12NM50FD STB12NM50FDT4 STB12NM50FD-1 STW14NM50FD MARKING P12NM50FD P12NM50FDFP B12NM50FD B12NM50FD B12NM50FD W14NM50FD PACKAGE TO-220 TO-220FP D2PAK D2PAK I2PAK TO-247 PACKAGING TUBE TUBE TUBE TAPE & REEL TUBE TUBE June 2002 1/14 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD ABSOLUTE MAXIMUM RATINGS Symbol Parameter TO-220 / D2PAK / I 2PAK Value TO-220FP TO-247 Unit VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 12 7.5 48 160 1.28 500 500 30 12 (*) 7.5 (*) 48 (*) 35 0.28 20 2500 - 65 to 150 - 65 to 150 14 8.8 56 175 1.4 V V V A A A W W/C V/ns V C C (l) Pulse width limited by safe operating area (1) I SD 12A, di/dt 400 A, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 I2PAK Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max (When mounted on minimum Footprint) D2PAK TO-220FP 3.57 TO-247 0.715 C/W C/W 30 C/W C 0.78 30 62.5 300 Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 6 400 Unit A mJ 2/14 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V VDS = VGS, ID = 250A VGS = 10V, ID = 6A 3 4 0.32 Min. 500 1 10 100 5 0.4 Typ. Max. Unit V A A nA V DYNAMIC Symbol gfs (1) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance Test Conditions VDS = 15 V, ID = 6 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 9.8 1027 205 24 3.7 Max. Unit S pF pF pF f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDD = 250 V, ID = 6 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 400V, ID = 12 A, VGS = 10V Min. SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Typ. 19 10 27.5 8 12 38.5 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400 V, ID = 12 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 39 18 29 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, VGS = 0 ISD = 12 A, di/dt = 100A/s VDD = 30V, Tj = 150C (see test circuit, Figure 5) 224 1.3 12 Test Conditions Min. Typ. Max. 12 48 1.5 Unit A A V ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/14 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD Safe Operating Area For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Safe Operating Area For TO-247 Thermal Impedance For TO-247 4/14 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 5/14 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature 6/14 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/14 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 8/14 F2 F G H2 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 9/14 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 10/14 3 1 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055 DIM. A C2 B2 B E L1 L2 D L P011P5/E e A1 C 11/14 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 12/14 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 13/14 STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 14/14 |
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