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| TIC108 SERIES SILICON CONTROLLED RECTIFIERS Copyright (c) 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997 q q q q q 5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 1 mA K A G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC108D Repetitive peak off-state voltage (see Note 1) TIC108M TIC108S TIC108N TIC108D Repetitive peak reverse voltage TIC108M TIC108S TIC108N Continuous on-state current at (or below) 80C case temperature (see Note 2) Average on-state current (180 conduction angle) at (or below) 80C case temperature (see Note 3) Surge on-state current (see Note 4) Peak positive gate current (pulse width 300 s) Peak gate power dissipation (pulse width 300 s) Average gate power dissipation (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 5 3.2 20 0.2 1.3 0.3 -40 to +110 -40 to +125 230 A A A A W W C C C V V UNIT NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k. 2. These values apply for continuous dc operation with resistive load. Above 80C derate linearly to zero at 110C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80C derate linearly to zero at 110C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms. . PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIC108 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT Repetitive peak off-state current Repetitive peak reverse current Gate trigger current VD = rated VDRM VR = rated VRRM VAA = 6 V VAA = 6 V tp(g) 20 s VGT Gate trigger voltage VAA = 6 V tp(g) 20 s VAA = 6 V tp(g) 20 s VAA = 6 V IH Holding current Initiating IT = 20 mA VAA = 6 V Initiating IT = 20 mA V TM dv/dt NOTE Peak on-state voltage Critical rate of rise of off-state voltage ITM = 5 A VD = rated VD (see Note 6) RGK = 1 k TC = 110C 80 RGK = 1 k TEST CONDITIONS RGK = 1 k IG = 0 RL = 100 RL = 100 RGK = 1 k RL = 100 RGK = 1 k RL = 100 RGK = 1 k RGK = 1 k TC = - 40C TC = 110C 0.4 0.2 15 mA 10 1.7 V V/s 0.6 TC = 110C TC = 110C tp(g) 20 s TC = - 40C 0.2 MIN TYP MAX 400 1 1 1.2 1 V UNIT A mA mA 6: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 3.5 62.5 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER tgt tq Gate-controlled turn-on time Circuit-commutated turn-off time IT = 5 A IT = 5 A TEST CONDITIONS IG = 10 mA IRM = 8 A See Figure 1 See Figure 2 MIN TYP 2.9 13.3 MAX UNIT s s PRODUCT INFORMATION 2 TIC108 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 30 V 6 IT VG VA RG G VG IG VA 90% PMC1AA DUT 10% t gt Figure 1. Gate-controlled turn-on time 30 V 6 0.1 F to 0.5 F R2 IA VA DUT RG G1 V G1 IG 0.1 VK (IRM Monitor) R1 TH1 RG IG V G2 NOTES: A. Resistor R1 is adjusted for the specified value of I RM . B. Resistor R2 value is 30/IH , where I H is the holding current value of thyristor TH1. C. Thyristor TH1 is the same device type as the DUT. D. Pulse Generators, G1 and G2, are synchronised to produce an on-state anode current waveform with the following characteristics: tP = 50 s to 300 s G2 duty cycle = 1% E. Pulse Generators, G1 and G2, have output pulse amplitude, V G , of 20 V and duration of 10 s to 20 s. G2 t P Synchronisation V G1 V G2 IT IA tP 0 IRM VA VT 0 tq PMC1AB Figure 2. Circuit-commutated turn-off time PRODUCT INFORMATION 3 TIC108 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS AVERAGE ANODE ON-STATE CURRENT DERATING CURVE IT(AV) - Maximum Average Anode Forward Current - A 6 Continuous DC 5 TI23AA MAX CONTINUOUS ANODE POWER DISSIPATED vs CONTINUOUS ANODE ON-STATE CURRENT PA - Max Continuous Anode Power Dissipated - W 100 TJ = 110 C TI23AB 4 = 180 3 10 2 0 1 180 Conduction Angle 0 30 40 50 60 70 80 90 100 110 1 1 10 IT - Continuous Anode Forward Current - A 100 TC - Case Temperature - C Figure 3. Figure 4. SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION 100 TC 80C ITM - Peak Half-Sine-Wave Current - A No Prior Device Conduction Gate Control Guaranteed TI23AC TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION 10 RJC(t) - Transient Thermal Resistance - C/W TI23AD 10 1 1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100 0*1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100 Figure 5. Figure 6. PRODUCT INFORMATION 4 TIC108 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE 10 VAA = 6 V IGT - Gate Trigger Current - mA tp(g) 20 s VGT - Gate Trigger Voltage - V RL = 100 0*8 TC23AA GATE TRIGGER VOLTAGE vs CASE TEMPERATURE 0*9 VAA = 6 V RL = 100 RGK = 1 k tp(g) 20 s 0*7 TC23AB 1 0*6 0*5 0*1 -60 -40 -20 0 20 40 60 80 100 120 0*4 -50 -25 0 25 50 75 100 125 TC - Case Temperature - C TC - Case Temperature - C Figure 7. Figure 8. GATE FORWARD VOLTAGE vs GATE FORWARD CURRENT 100 IA = 0 VGF - Gate Forward Voltage - V TC = 25 C tp = 300 s Duty Cycle 2 % TC23AC HOLDING CURRENT vs CASE TEMPERATURE 10 VAA = 6 V RGK = 1 k Initiating IT = 20 mA IH - Holding Current - mA TC23AD 10 1 0*1 1 10 100 1000 1 -50 -25 0 25 50 75 100 125 IGF - Gate Forward Current - mA TC - Case Temperature - C Figure 9. Figure 10. PRODUCT INFORMATION 5 TIC108 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT 2.6 TC = 25 C 2.4 VTM - Peak On-State Voltage - V 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0*1 2.5 1 ITM - Peak On-State Current - A 10 1 10 IG - Gate Current - mA 100 tp = 300 s Duty Cycle 2 % t gt - Gate Controlled Turn-On Time - s 3.0 TC23AE GATE-CONTROLLED TURN-ON TIME vs GATE CURRENT 3.1 TC23AF 2.9 2.8 2.7 VAA = 30 V RL = 6 2.6 TC = 25 C See Test Circuit and Waveforms Figure 11. Figure 12. CIRCUIT-COMMUTATED TURN-OFF TIME vs CASE TEMPERATURE 21 t q - Circuit-Commutated Turn-Off Time - s 20 19 18 17 16 15 14 13 12 20 VAA = 30 V RL = 6 IRM = 8 A tp = 300 s Duty Cycle 2 % TC23AG 30 40 50 60 70 80 90 100 110 120 TC - Case Temperature - C Figure 13. PRODUCT INFORMATION 6 TIC108 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE PRODUCT INFORMATION 7 TIC108 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 8 |
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