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| TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS Copyright (c) 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 4 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100C 1200 Volt Blocking Capability 100 W at 25C Case Temperature E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA SOT-93 PACKAGE (TOP VIEW) B 1 q q C 2 absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp 10 ms, duty cycle 2%. TIPL761B TIPL761C TIPL761B TIPL761C TIPL761B TIPL761C SYMBOL VCBO VCES VCEO V EBO IC ICM Ptot Tj Tstg VALUE 1100 1200 1100 1200 500 550 10 4 8 100 -65 to +150 -65 to +150 UNIT V V V V A A W C C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER V CEO(sus) Collector-emitter sustaining voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance IC = 10 mA TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = 0.5 A IC = IC = IC = IC = IC = IC = 2A 3A 3A 2A 3A 3A (see Notes 3 and 4) TC = 100C f= 1 MHz 12 110 (see Notes 3 and 4) TC = 100C (see Notes 3 and 4) 20 TC = 100C TC = 100C (see Note 2) TIPL761B TIPL761C TIPL761B TIPL761C TIPL761B TIPL761C TIPL761B TIPL761C MIN 500 550 50 50 200 200 50 50 1 60 1.0 2.5 5.0 1.2 1.4 1.3 MHz pF V V A mA A TYP MAX UNIT V VCE = 1100 V ICES V CE = 1200 V V CE = 1100 V V CE = 1200 V ICEO IEBO hFE VCE = 500 V V CE = 550 V VEB = VCE = IB = IB = IB = IB = IB = IB = VCE = VCB = 10 V 5V 0.4 A 0.6 A 0.6 A 0.4 A 0.6 A 0.6 A 10 V 20 V VCE(sat) V BE(sat) ft Cob IC = 0.5 A IE = 0 f = 0.1 MHz NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC Junction to case thermal resistance MIN TYP MAX 1.25 UNIT C/W inductive-load-switching characteristics at 25C case temperature (unless otherwise noted) PARAMETER tsv trv tfi tti txo tsv trv tfi tti txo TEST CONDITIONS MIN TYP MAX 2.5 300 UNIT s ns ns ns ns s ns ns ns ns Voltage storage time Voltage rise time Current fall time Current tail time Cross over time Voltage storage time Voltage rise time Current fall time Current tail time Cross over time IC = 3 A V BE(off) = -5 V IB(on) = 0.6 A TC = 100C (see Figures 1 and 2) IC = 3 A V BE(off) = -5 V IB(on) = 0.6 A (see Figures 1 and 2) 250 150 400 3 500 250 150 750 Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 33 +5V D45H11 BY205-400 BY205-400 33 1 pF RB (on) 180 H vcc V Gen 68 1 k 0.02 F +5V 1 k 2N2222 TUT BY205-400 Vclamp = 400 V 270 BY205-400 1 k 2N2904 5X BY205-400 Adjust pw to obtain IC 47 For IC < 6 A For IC 6 A VCC = 50 V VCC = 100 V 100 D44H11 V BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti B - E = txo IB A (90%) Base Current C 90% V CE B 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 , Cin < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms PRODUCT INFORMATION 3 TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TC = 125C TC = 25C TC = -65C VCE = 5 V VCE(sat) - Collector-Emitter Saturation Voltage - V 100 TCP741AA COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 5*0 TCP741AB TC = 25C TC = 100C 4*0 IC = 4 A IC = 3 A IC = 2 A IC = 1 A hFE - Typical DC Current Gain 3*0 10 2*0 1*0 1*0 0*1 0 1*0 IC - Collector Current - A 10 0 0*5 1*0 IB - Base Current - A 1*5 2*0 Figure 3. Figure 4. BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1*25 VBE(sat) - Base-Emitter Saturation Voltage - V TC = 25C TCP741AC COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE 10 TCP741AN 1*15 ICES - Collector Cut-off Current - A 1*0 TIPL761C VCE = 1200 V 0*1 1*05 0*95 TIPL761B VCE = 1100 V 0*01 0*85 IC = 4 A IC = 3 A IC = 2 A IC = 1 A 0 0*2 0*4 0*6 0*8 1*0 1*2 1*4 1*6 0*75 IB - Base Current - A 0*001 -60 -30 0 30 60 90 120 TC - Case Temperature - C Figure 5. Figure 6. PRODUCT INFORMATION 4 TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 SAP741AC IC - Collector Current - A 1*0 0.1 tp = 10 s tp = 100 s tp = 1 ms tp = 10 ms DC Operation 0*01 1*0 10 TIPL761B TIPL761C 100 1000 VCE - Collector-Emitter Voltage - V Figure 7. THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION Z JC/R JC - Normalised Transient Thermal Impedance 1*0 50% TCP741AE 20% 10% 0*1 5% 0% duty cycle = t1/t2 Read time at end of t1, TJ(max) - TC = P D(peak) * 0*01 10-5 10-4 10 -3 t1 t2 () ZJC R JC * RJC(max) 10 0 10 -2 10-1 t1 - Power Pulse Duration - s Figure 8. PRODUCT INFORMATION 5 TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 o 4,1 4,0 15,2 14,7 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW PRODUCT INFORMATION 6 TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 7 |
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