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| TP 60 P Silizium-Fotoelement Silicon Photovoltaic Cell TP 60 P Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1120 nm q Kathode = Chipunterseite q Montage durch Schraube/Mutter Anwendungen q fur Me-, Steuer- und Regelzwecke q zur Abtastung von Lichtimpulsen q quantitative Lichtmessung im sichtbaren Licht- und nahen Infrarotbereich Features q Especially suitable for applications from 400 nm to 1120 nm q Cathode = back contact q Mounting by bolt/nut Applications q For control and drive circuits q Light pulse scanning q Quantitative light measurements in the visible light and near infrared range Typ Type TP 60 P Bestellnummer Ordering Code Q62607-S60 Semiconductor Group 200 10.95 fso06007 TP 60 P Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Symbol Symbol Wert Value - 40 ... + 80 1 Einheit Unit C V Top; Tstg VR Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 0 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Form der bestrahlungsempfindlichen Flache Shape of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 1 V; E = 0 Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung, Open-circuit voltage Ev = 1000 Ix Ee = 0.5 mW/cm2; = 850 nm Symbol Symbol S S max Wert Value 1 ( 0.7) 900 400 ... 1120 Einheit Unit A/Ix nm nm A 1.3 Sechseck hexagon 60 0.1 ( 2) 0.55 0.80 cm2 Grad deg. A A/W Electrons Photon IR S VO VO 450 ( 270) 430 mV Semiconductor Group 201 TP 60 P Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Kurzschlustrom, Ev = 1000 Ix Short-circuit current Ev = 1000 Ix Ee = 0.5 mW/cm2; = 850 nm Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL= 1 k; VR = 1 V; = 850 nm; Ip = 50 A Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Kapazitat, VR = 0 V, f = 1 MHz, Ev = 0 Ix Capacitance Symbol Symbol Wert Value Einheit Unit ISC ISC tr, tf 1 ( 0.7) 380 18 mA A s TCV TCI - 2.6 0.12 11 mV/K %/K nF C0 Semiconductor Group 202 TP 60 P Relative spectral sensitivity Srel = f () Open-curcuit voltage VO = f (Ev ) Short-circuit current ISC = f (Ev ) Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (VR), E = 0 Directional characteristics Srel = f () Semiconductor Group 203 |
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